Authors: KOZLOVSKII SI

Citation: Si. Kozlovskii, STRAIN THYRISTOR WITH AN ACCELERATING ELECTRIC-FIELD IN THE FIRST BASE, Semiconductors, 30(9), 1996, pp. 810-813

Authors: KOZLOVSKII SI

Citation: Si. Kozlovskii, A 2-COLLECTOR, SILICON, N-P-N TENSOTRANSISTOR WITH AN ACCELERATING ELECTRIC-FIELD IN ITS BASE, Semiconductors, 29(10), 1995, pp. 930-933

Authors: BABICHEV GG ZHADKO IP KOZLOVSKII SI KUCHERUK AD ROMANOV VA

Citation: Gg. Babichev et al., DEPENDENCE OF INTEGRAL TENSOTRANSDUCERS C AN-FORMING ON THE VALUE ANDTEMPERATURE-DEPENDENCE OF THEIR TENSOSENSITIVITY, Zurnal tehniceskoj fiziki, 64(9), 1994, pp. 89-94

Authors: ZHADKO IP KOZLOVSKII SI ROMANOV VA

Citation: Ip. Zhadko et al., REDISTRIBUTION OF ELECTRIC-POTENTIAL IN S EMICONDUCTING PLATE WITH ARTIFICIALLY DIRECTED HETEROGENEOUS ANISOTROPY OF CONDUCTIVITY, Zurnal tehniceskoj fiziki, 64(7), 1994, pp. 185-187