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KRETZ T
PRIBAT D
LEGAGNEUX P
PLAIS F
HUET O
BISARO R
Citation: T. Kretz et al., KINETICS OF CRYSTALLIZATION OF AMORPHOUS AND MIXED-PHASE SILICON FILMS DEPOSITED BY PYROLYSIS OF DISILANE GAS AT VERY-LOW PRESSURE, JPN J A P 2, 34(6A), 1995, pp. 660-663
Authors:
KRETZ T
PRIBAT D
LEGAGNEUX P
PLAIS F
HUET O
MAGIS M
Citation: T. Kretz et al., ELECTRON-MICROSCOPY AND ELECTRON CONDUCTA NCE MEASUREMENTS IN-SITU OFTHE CRYSTALLIZATION OF A-SI FILMS PRODUCED BY SILANE AND DISILANE PYROLYSIS WITH LPDVD (LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION) UNDER HIGH-PURITY CONDITIONS, Journal de physique. IV, 5(C3), 1995, pp. 291-296
Authors:
TALLARIDA G
PECORA A
FORTUNATO G
PLAIS F
LEGAGNEUX P
KRETZ T
PRIBAT D
Citation: G. Tallarida et al., LEAKAGE CURRENT REDUCTION DUE TO HOT-CARRIER EFFECTS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Journal of non-crystalline solids, 187, 1995, pp. 195-198
Authors:
STROH RJ
PLAIS F
KRETZ T
LEGAGNEUX P
HUET O
MAGIS M
PRIBAT D
JIANG N
HUGON MC
AGIUS B
Citation: Rj. Stroh et al., LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 9-13
Authors:
VIGO JM
AMORIS E
LAFRANCE M
FUCHS M
KRETZ T
LEPERS P
MAURICKX T
Citation: Jm. Vigo et al., NEW PLATES IN THERMOMECHANICAL STEELS - A N OUTSTANDING EXAMPLE - THEREMOULINS BRIDGE, Revue de métallurgie, 91(10), 1994, pp. 1445-1456