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Authors: GOLUBEV VG KROPOTOV GI PATSEKIN AV SOBOLEV NA SHEK EI DUKIN AA

Citation: Vg. Golubev et al., FAR-INFRARED PHOTOCONDUCTIVITY OF SILICON IRRADIATED WITH FAST-NEUTRONS, Semiconductors, 29(10), 1995, pp. 981-983

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Citation: Ns. Averkiev et al., THE WIDTH OF THE SHALLOW DONORS AUTOIONIZING STATES IN SEMICONDUCTORS, Solid state communications, 93(5), 1995, pp. 453-453

Authors: ANDREEV BA GOLUBEV VG EMTSEV VV KROPOTOV GI OGANESYAN GA SCHMALZ K

Citation: Ba. Andreev et al., FORMATION OF NEW DONORS AS A RESULT OF HEAT-TREATMENT OF SILICON WITHDIFFERENT OXYGEN CONCENTRATIONS, Semiconductors, 27(4), 1993, pp. 315-323

Authors: ASTROVA EV GREKHOV IV KOZLOV VA KROPOTOV GI LEBEDEV AA PATSEKIN AV VORONKOV VB

Citation: Ev. Astrova et al., EFFECT OF CHEMICAL SURFACE-TREATMENT ON P-LAYER FORMATION IN THE INTERFACE REGION OF DIRECTLY BONDED SI WAFERS, Semiconductor science and technology, 8(9), 1993, pp. 1700-1705