Authors: SEMENOVA GN KRYSHTAB TG SHEKHOVTSOV LV SADOFEV YG

Citation: Gn. Semenova et al., MICROSTRUCTURE OF GERMANIUM FILMS PREPARE D THROUGH THE MOLECULAR-BEAM EPITAXY ON GALLIUM-ARSENIDE SUBSTRATES, Pis'ma v Zurnal tehniceskoj fiziki, 22(5), 1996, pp. 75-80

Authors: SEMENOVA GN KRYSHTAB TG KLADKO VP KRUKOVSKII SI SVITELSKII AV

Citation: Gn. Semenova et al., PROPERTIES OF GAAS AND ALXGA1-XAS LAYERS GROWN FROM YTTERBIUM-DOPED GALLIUM MELTS BY LIQUID-PHASE EPITAXY, Inorganic materials, 32(8), 1996, pp. 807-809

Authors: KLADKO VP SEMENOV GN KRYSHTAB TG KRUKOVSKII SI

Citation: Vp. Kladko et al., ALXGA1-XAS LAYERS IN GA-BI-AL-GAAS SYSTEM, Zurnal tehniceskoj fiziki, 64(5), 1994, pp. 103-106

Authors: SEMENOVA GN KLADKO VP KRYSHTAB TG SADOFEV YG SVITELSKII AV KORYTTSEV SV

Citation: Gn. Semenova et al., STRUCTURE DEFECTS AND PHOTOLUMINESCENCE OF EPITAXIAL INXGA1-XAS FILMS, Semiconductors, 27(1), 1993, pp. 86-89