Authors: ARGUNOVA TS GREKHOV IV GUTKIN MY KOSTINA LS BELYAKOVA EN KUDRYAVTSEVA TV KIM ED PARK DM

Citation: Ts. Argunova et al., DISLOCATIONS IN SILICON STRUCTURES OBTAIN ED THROUGH THE DIRECT SURFACE JOINING WITH RELIEF, Fizika tverdogo tela, 38(11), 1996, pp. 3361-3364

Authors: ARGUNOVA TS ANDREEV AG BELYAKOVA EI GREKHOV IV KOSTINA LS KUDRYAVTSEVA TV

Citation: Ts. Argunova et al., DIRECT JOINING OF SILICON PLATES WITH REG ULAR RELIEF ON INTERFACES, Pis'ma v Zurnal tehniceskoj fiziki, 22(4), 1996, pp. 1-6

Authors: GREKHOV IV BERMAN LS ARGUNOVA TS KOSTINA LS BELYAKOVA EI KUDRYAVTSEVA TV KIM ED KIM SC PAK DM

Citation: Iv. Grekhov et al., RECOMBINATION PROPERTIES OF DIRECTLY BOUN DED SILICON STRUCTURES WITHREGULAR RELIEF ON THE INTERFACE, Pis'ma v Zurnal tehniceskoj fiziki, 22(23), 1996, pp. 14-18

Authors: KIM ED KIM NK KIM SC GREKHOV IV ARGUNOVA TV KOSTINA LS KUDRYAVTSEVA TV

Citation: Ed. Kim et al., SILICON DIRECT BONDING TECHNOLOGY EMPLOYING A REGULARLY GROOVED SURFACE, Electronics Letters, 31(23), 1995, pp. 2047-2048