Authors: SINGH M BHATIA KL KISHORE N KUNDU RS KANJILAL D

Citation: M. Singh et al., HIGH-ENERGY ION-IMPLANTATION INDUCED ELECTRICAL EFFECTS IN BULK AMORPHOUS AS2SE3, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 140(3-4), 1998, pp. 349-360

Authors: SINGH M BHATIA KL KISHORE N KUNDU RS SINGH P KANJILAL D

Citation: M. Singh et al., ELECTRICAL EFFECTS IN MEV ENERGY ION-IRRADIATED AS2SE3 GLASS, Vacuum, 48(12), 1997, pp. 969-972

Authors: KUNDU RS BHATIA KL KISHORE N JAIN VK

Citation: Rs. Kundu et al., EFFECT OF THE ADDITION OF THE IMPURITY MN ON THE ELECTRONIC-PROPERTIES OF THE AMORPHOUS-SEMICONDUCTOR (SE70TE30)(99.9)MN-0.1, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 74(3), 1996, pp. 317-330

Authors: KUNDU RS BHATIA KL KISHORE N SINGH P VIJAYARAGHAVAN C

Citation: Rs. Kundu et al., EFFECT OF ADDITION OF ZN IMPURITIES ON THE ELECTRONIC CONDUCTION IN SEMICONDUCTING SE-80-XTE20ZNX GLASSES, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 72(5), 1995, pp. 513-528

Authors: SINGH M BHATIA KL KISHORE N SINGH P KUNDU RS

Citation: M. Singh et al., ELECTRONIC CONDUCTION IN VITREOUS SEMICONDUCTORS IN THE PSEUDO-BINARYSYSTEM (AS2S3)(1-X)(PBS)(X), Journal of non-crystalline solids, 180(2-3), 1995, pp. 251-259