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Results:
1-7
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Results: 7
Authors:
KUNIKIYO T
TAKENAKA M
MORIFUJI M
TANIGUCHI K
HAMAGUCHI C
Citation: T. Kunikiyo et al., A MODEL OF IMPACT IONIZATION DUE TO THE PRIMARY HOLE IN SILICON FOR AFULL BAND MONTE-CARLO SIMULATION, Journal of applied physics, 79(10), 1996, pp. 7718-7725
Authors:
SONODA KI
YAMAJI M
TANIGUCHI K
HAMAGUCHI C
KUNIKIYO T
Citation: Ki. Sonoda et al., NONLOCAL IMPACT IONIZATION MODEL AND ITS APPLICATION TO SUBSTRATE CURRENT SIMULATION OF N-MOSFETS, IEICE transactions on electronics, E78C(3), 1995, pp. 274-280
Authors:
FUJINAGA M
TOTTORI I
KUNIKIYO T
UCHIDA T
KOTANI N
TSUKAMOTO K
Citation: M. Fujinaga et al., 3-D NUMERICAL MODELING OF THERMAL FLOW FOR INSULATING THIN-FILM USINGSURFACE-DIFFUSION, IEEE transactions on computer-aided design of integrated circuits and systems, 14(5), 1995, pp. 631-638
Authors:
KUNIKIYO T
MITSUI K
FUJINAGA M
UCHIDA T
KOTANI N
Citation: T. Kunikiyo et al., REVERSE SHORT-CHANNEL EFFECT DUE TO LATERAL DIFFUSION OF POINT-DEFECTINDUCED BY SOURCE DRAIN ION-IMPLANTATION, IEEE transactions on computer-aided design of integrated circuits and systems, 13(4), 1994, pp. 507-514
Authors:
KAMAKURA Y
MIZUNO H
YAMAJI M
MORIFUJI M
TANIGUCHI K
HAMAGUCHI C
KUNIKIYO T
TAKENAKA M
Citation: Y. Kamakura et al., IMPACT IONIZATION MODEL FOR FULL BAND MONTE-CARLO SIMULATION, Journal of applied physics, 75(7), 1994, pp. 3500-3506
Authors:
KUNIKIYO T
TAKENAKA M
KAMAKURA Y
YAMAJI M
MIZUNO H
MORIFUJI M
TANIGUCHI K
HAMAGUCHI C
Citation: T. Kunikiyo et al., A MONTE-CARLO SIMULATION OF ANISOTROPIC ELECTRON-TRANSPORT IN SILICONINCLUDING FULL BAND-STRUCTURE AND ANISOTROPIC IMPACT-IONIZATION MODEL, Journal of applied physics, 75(1), 1994, pp. 297-312
Authors:
ABRAMO A
BAUDRY L
BRUNETTI R
CASTAGNE R
CHAREF M
DESSENNE F
DOLLFUS P
DUTTON R
ENGL WL
FAUQUEMBERGUE R
FIEGNA C
FISCHETTI MV
GALDIN S
GOLDSMAN N
HACKEL M
HAMAGUCHI C
HESS K
HENNACY K
HESTO P
HIGMAN JM
IIZUKA T
JUNGEMANN C
KAMAKURA Y
KOSINA H
KUNIKIYO T
LAUX SE
LIM HC
MAZIAR C
MIZUNO H
PEIFER HJ
RAMASWAMY S
SANO N
SCORBOHACI PG
SELBERHERR S
TAKENAKA M
TANG TW
TANIGUCHI K
THOBEL JL
THOMA R
TOMIZAWA K
TOMIPZAWA M
VOGELSANG T
WANG SL
WANG XL
YAO CS
YODER PD
YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
Risultati:
1-7
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