AAAAAA
Results: 1-25/63
Authors:
LOU JH
KUO JB
Citation: Jh. Lou et Jb. Kuo, A 1.5-V BOOTSTRAPPED PASS-TRANSISTOR-BASED MANCHESTER CARRY CHAIN CIRCUIT SUITABLE FOR IMPLEMENTING LOW-VOLTAGE CARRY LOOK-AHEAD ADDERS, IEEE transactions on circuits and systems. 1, Fundamental theory andapplications, 45(11), 1998, pp. 1191-1194
Authors:
SU KW
KUO JB
Citation: Kw. Su et Jb. Kuo, ANALYTICAL CAPACITANCE MODEL FOR SUBMICRON ACCUMULATION-MODE SOI MOS DEVICES, Solid-state electronics, 42(4), 1998, pp. 513-522
Authors:
LIN SC
KUO JB
HUANG KT
SUN SW
Citation: Sc. Lin et al., ANALYTICAL SUBTHRESHOLD CURRENT HUMP MODEL FOR DEEP-SUBMICRON SHALLOW-TRENCH-ISOLATED CMOS DEVICES, Solid-state electronics, 42(10), 1998, pp. 1871-1879
Authors:
WU HC
KUO JB
Citation: Hc. Wu et Jb. Kuo, A COMPACT VELOCITY-OVERSHOOT MODEL FOR DEEP-SUBMICRON BIPOLAR-DEVICESCONSIDERING ENERGY-TRANSPORT, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 417-422
Authors:
LIN PF
LOU JH
KUO JB
Citation: Pf. Lin et al., A CMOS QUADRATURE MODULATOR FOR WIRELESS COMMUNICATION IC, IEEE transactions on circuits and systems. 1, Fundamental theory andapplications, 44(6), 1997, pp. 559-561
Authors:
CHEN SS
KUO JB
Citation: Ss. Chen et Jb. Kuo, AN ANALYTICAL CAD KINK EFFECT MODEL OF PARTIALLY-DEPLETED SOI NMOS DEVICES OPERATING IN STRONG INVERSION, Solid-state electronics, 41(3), 1997, pp. 447-458
Authors:
LIU CM
KUO JB
Citation: Cm. Liu et Jb. Kuo, QUASI-SATURATION CAPACITANCE BEHAVIOR OF A DMOS DEVICE, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1117-1123
Authors:
SU KW
KUO JB
Citation: Kw. Su et Jb. Kuo, ANALYSIS OF CURRENT CONDUCTION IN SHORT-CHANNEL ACCUMULATION-MODE SOIPMOS DEVICES, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 832-840
Authors:
SU KW
KUO JB
Citation: Kw. Su et Jb. Kuo, A NONLOCAL IMPACT IONIZATION LATTICE TEMPERATURE MODEL FOR VLSI DOUBLE-GATE ULTRATHIN SOI NMOS DEVICES, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 324-330
Authors:
LOU JH
KUO JB
Citation: Jh. Lou et Jb. Kuo, A 1.5-V FULL-SWING BOOTSTRAPPED CMOS LARGE CAPACITIVE-LOAD DRIVER CIRCUIT SUITABLE FOR LOW-VOLTAGE CMOS VLSI, IEEE journal of solid-state circuits, 32(1), 1997, pp. 119-121
Authors:
YEH CC
LOU JH
KUO JB
Citation: Cc. Yeh et al., 1.5 V CMOS FULL-SWING ENERGY-EFFICIENT LOGIC (EEL) CIRCUIT SUITABLE FOR LOW-VOLTAGE AND LOW-POWER VLSI APPLICATIONS, Electronics Letters, 33(16), 1997, pp. 1375-1376
Authors:
KUO JB
Citation: Jb. Kuo, MICROELECTRONICS R-AND-D BLOSSOMS IN TAIWAN, IEEE circuits and devices magazine, 12(2), 1996, pp. 31-34
Authors:
CHEN YG
KUO JB
Citation: Yg. Chen et Jb. Kuo, A UNIFIED TRIODE SATURATION MODEL WITH AN IMPROVED CONTINUITY IN THE OUTPUT CONDUCTANCE SUITABLE FOR CAD OF VLSI CIRCUITS USING DEEP SUB-0.1 MU-M NMOS DEVICES, IEEE transactions on computer-aided design of integrated circuits and systems, 15(2), 1996, pp. 256-258
Authors:
SU KW
KUO JB
Citation: Kw. Su et Jb. Kuo, MODELING NARROW-CHANNEL EFFECT IN VLSI MESA-ISOLATED SOI MOS DEVICES USING A QUASI-2-DIMENSIONAL APPROACH, Solid-state electronics, 39(9), 1996, pp. 1321-1329
Authors:
KUO JB
CHANG YW
LAI CS
Citation: Jb. Kuo et al., A VELOCITY-OVERSHOOT CAPACITANCE MODEL FOR 0.1-MU-M MOS-TRANSISTORS, Solid-state electronics, 39(8), 1996, pp. 1173-1178
Authors:
CHEN BY
WU HC
KUO JB
Citation: By. Chen et al., A 2D SIMULATION STUDY ON THE DC AND TRANSIENT-BEHAVIOR OF A SIGE-BASEHETEROJUNCTION BIPOLAR DEVICE WITH AN EXTENDED - GERMANIUM PROFILE INTO THE N-EPI REGION WITH APPLICATION TO AN ECL BUFFER, Solid-state electronics, 39(6), 1996, pp. 935-939
Authors:
CHEN SS
LIN SC
KUO JB
Citation: Ss. Chen et al., KINK EFFECT ON SUBTHRESHOLD CURRENT CONDUCTION MECHANISM FOR N-CHANNEL METAL-OXIDE-SILICON DEVICES, Journal of applied physics, 80(10), 1996, pp. 5821-5827
Authors:
CHEN SS
KUO JB
Citation: Ss. Chen et Jb. Kuo, AN ANALYTICAL MODERATE INVERSION DRAIN CURRENT MODEL FOR POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS CONSIDERING DEEP AND TAIL STATES IN THE GRAIN-BOUNDARY, Journal of applied physics, 79(4), 1996, pp. 1961-1967
Authors:
CHEN SS
KUO JB
Citation: Ss. Chen et Jb. Kuo, DEEP-SUBMICROMETER DOUBLE-GATE FULLY-DEPLETED SOI PMOS DEVICES - A CONCISE SHORT-CHANNEL EFFECT THRESHOLD VOLTAGE MODEL USING A QUASI-2D APPROACH, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1387-1393
Authors:
SU KW
KUO JB
Citation: Kw. Su et Jb. Kuo, ANALYTICAL THRESHOLD VOLTAGE FORMULA INCLUDING NARROW-CHANNEL EFFECTSFOR VLSI MESA-ISOLATED FULLY DEPLETED ULTRATHIN SILICON-ON-INSULATOR N-CHANNEL METAL-OXIDE-SILICON DEVICES, JPN J A P 1, 34(8A), 1995, pp. 4010-4019
Authors:
LIU CM
KUO JB
Citation: Cm. Liu et Jb. Kuo, TURN-OFF TRANSIENT ANALYSIS OF A DOUBLE DIFFUSED METAL-OXIDE-SEMICONDUCTOR DEVICE CONSIDERING QUASI SATURATION, JPN J A P 1, 34(2B), 1995, pp. 869-873
Authors:
CHEN SS
KUO JB
Citation: Ss. Chen et Jb. Kuo, CONCISE SHORT-CHANNEL EFFECT MODEL FOR INVERSION-TYPE ULTRATHIN SILICON-ON-INSULATOR P-CHANNEL METAL-OXIDE-SILICON FIELD-EFFECT TRANSISTORSBASED ON PARTITIONING OF THIN-FILM, JPN J A P 1, 34(12A), 1995, pp. 6340-6345
Authors:
KUO JB
CHIANG CS
Citation: Jb. Kuo et Cs. Chiang, CHARGE SHARING PROBLEMS IN THE DYNAMIC LOGIC-CIRCUITS - BICMOS VERSUSCMOS AND A 1.5V BICMOS DYNAMIC LOGIC-CIRCUIT FREE FROM CHARGE SHARINGPROBLEMS, IEEE transactions on circuits and systems. 1, Fundamental theory andapplications, 42(11), 1995, pp. 974-977
Authors:
KUO JB
CHEN YG
SU KW
Citation: Jb. Kuo et al., SIDEWALL-RELATED NARROW CHANNEL-EFFECT IN MESA-ISOLATED FULLY-DEPLETED ULTRA-THIN SOI NMOS DEVICES, IEEE electron device letters, 16(9), 1995, pp. 379-381
Authors:
CHEN BY
KUO JB
Citation: By. Chen et Jb. Kuo, AN ACCURATE KNEE CURRENT MODEL CONSIDERING QUASI-SATURATION FOR BJTS OPERATING AT HIGH-CURRENT DENSITY, Solid-state electronics, 38(6), 1995, pp. 1282-1284