Authors:
RASHED M
SHIH WK
JALLEPALLI S
ZAMAN R
KWAN TJT
MAZIAR CM
Citation: M. Rashed et al., A MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN STRAINED SI SIGE HETEROSTRUCTURES/, VLSI design (Print), 6(1-4), 1998, pp. 213-216
Citation: Mg. Gray et al., A MULTICOMB VARIANCE REDUCTION SCHEME FOR MONTE-CARLO SEMICONDUCTOR SIMULATORS, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 918-924