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Authors: PASSLACK M HONG M OPILA RL MANNAERTS JP KWO JR

Citation: M. Passlack et al., GAAS SURFACE PASSIVATION USING IN-SITU OXIDE DEPOSITION, Applied surface science, 104, 1996, pp. 441-447

Authors: PASSLACK M HONG M MANNAERTS JP KWO JR TU LW

Citation: M. Passlack et al., RECOMBINATION VELOCITY AT OXIDE-GAAS INTERFACES FABRICATED BY IN-SITUMOLECULAR-BEAM EPITAXY, Applied physics letters, 68(25), 1996, pp. 3605-3607

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Authors: PASSLACK M HONG M SCHUBERT EF KWO JR MANNAERTS JP CHU SNG MORIYA N THIEL FA

Citation: M. Passlack et al., IN-SITU FABRICATED GA2O3-GAAS STRUCTURES WITH LOW INTERFACE RECOMBINATION VELOCITY, Applied physics letters, 66(5), 1995, pp. 625-627