Authors:
PASSLACK M
HONG M
MANNAERTS JP
OPILA RL
CHU SNG
MORIYA N
REN F
KWO JR
Citation: M. Passlack et al., LOW D-IT, THERMODYNAMICALLY STABLE GA2O3-GAAS INTERFACES - FABRICATION, CHARACTERIZATION, AND MODELING, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 214-225
Authors:
PASSLACK M
HONG M
MANNAERTS JP
KWO JR
TU LW
Citation: M. Passlack et al., RECOMBINATION VELOCITY AT OXIDE-GAAS INTERFACES FABRICATED BY IN-SITUMOLECULAR-BEAM EPITAXY, Applied physics letters, 68(25), 1996, pp. 3605-3607