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Results:
1-8
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Results: 8
Authors:
Bertilsson, K
Nilsson, HE
Hjelm, M
Petersson, CS
Kackell, P
Persson, C
Citation: K. Bertilsson et al., The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs, SOL ST ELEC, 45(5), 2001, pp. 645-653
Authors:
Bechstedt, F
Stekolnikov, AA
Furthmuller, J
Kackell, P
Citation: F. Bechstedt et al., Origin of the different reconstructions of diamond, Si, and Ge(111) surfaces - art. no. 016103, PHYS REV L, 8701(1), 2001, pp. 6103-NIL_95
Authors:
Furthmuller, J
Kackell, P
Bechstedt, F
Kresse, G
Citation: J. Furthmuller et al., Extreme softening of Vanderbilt pseudopotentials: General rules and case studies of first-row and d-electron elements, PHYS REV B, 61(7), 2000, pp. 4576-4587
Authors:
Kackell, P
Terakura, K
Citation: P. Kackell et K. Terakura, First-principle analysis of the dissociative adsorption of formic acid on rutile TiO2(110), APPL SURF S, 166(1-4), 2000, pp. 370-375
Authors:
Kackell, P
Terakura, K
Citation: P. Kackell et K. Terakura, Dissociative adsorption of formic acid and diffusion of formats on the TiO2(110) surface: the role of hydrogen, SURF SCI, 461(1-3), 2000, pp. 191-198
Authors:
Bauer, A
Krausslich, J
Kuschnerus, P
Goetz, K
Kackell, P
Bechstedt, F
Citation: A. Bauer et al., High-precision determination of atomic positions in 4H- and 6H-SiC crystals, MAT SCI E B, 61-2, 1999, pp. 217-220
Authors:
Hjelm, M
Nilsson, HE
Kackell, P
Persson, C
Sannemo, U
Petersson, CS
Citation: M. Hjelm et al., A study of the anisotropic electron transport in 4H and 6H silicon carbideby Monte Carlo simulation, PHYS SCR, T79, 1999, pp. 42-45
Authors:
Kackell, P
Furthmuller, J
Bechstedt, F
Citation: P. Kackell et al., Polytypic transformations in SiC: An ab initio study, PHYS REV B, 60(19), 1999, pp. 13261-13264
Risultati:
1-8
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