Authors:
Kaiblinger-Grujin, G
Kosina, H
Selberherr, S
Citation: G. Kaiblinger-grujin et al., Response to "Comment on 'Influence of the doping element on the electron mobility in n-silicon'" [J-Appl. Phys. 85, 7984 (1999)], J APPL PHYS, 85(11), 1999, pp. 7986-7986