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Results:
1-8
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Results: 8
Authors:
Deck, T
Kalganov, VD
Mileshkina, NV
Moscardini, A
Citation: T. Deck et al., Photo-field-emission characteristics of semiconductor detector structures, PHYS LOW-D, 5-6, 2001, pp. 9-18
Authors:
Kalganov, VD
Mileshkina, NV
Moskardini, AO
Sapronov, SA
Citation: Vd. Kalganov et al., Manifestation of surface electron states in the energy distribution of electrons under the field emission from p-type germanium, J COMMUN T, 45(6), 2000, pp. 690-694
Authors:
Kalganov, VD
Mileshkina, NV
Citation: Vd. Kalganov et Nv. Mileshkina, Field-emission spectroscopy of an n-GaAs single crystal with an oxidized surface, J COMMUN T, 45(12), 2000, pp. 1347-1351
Authors:
Deck, T
Kalganov, VD
Mileshkina, NV
Moscardini, A
Citation: T. Deck et al., Electron energy distribution analysis of GaAs field emitter, PHYS LOW-D, 7-8, 2000, pp. 65-75
Authors:
Pogosov, VV
Kotlyarov, DP
Mileshkina, NV
Kalganov, VD
Deck, T
Moscardini, A
Citation: Vv. Pogosov et al., Quantum size effects in finite metallic whiskers, PHYS LOW-D, 7-8, 2000, pp. 91-104
Authors:
Deck, T
Kalganov, VD
Mileshkina, NV
Moscardini, A
Ostroumova, EV
Citation: T. Deck et al., Size effect application in the field radiation detectors and Auger-transistors, PHYS LOW-D, 11, 2000, pp. 147-160
Authors:
Rogachev, AA
Kalganov, VD
Mileshkina, NV
Ostroumova, EV
Citation: Aa. Rogachev et al., The influence of strong electric field on the interface in the Al-SiO2-n-Si Auger transistor, MICROELEC J, 31(11-12), 2000, pp. 905-911
Authors:
Kalganov, VD
Mileshkina, NV
Citation: Vd. Kalganov et Nv. Mileshkina, Experimental study of high-field charge transport characteristics in n-GaAs emitters, PHYS LOW-D, 12, 1999, pp. 23-32
Risultati:
1-8
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