AAAAAA

   
Results: 1-4 |
Results: 4
The use of the amphoteric nature of impurity silicon atoms for obtaining planar p-n junctions on GaAs (111)A substrates by molecular beam epitaxy
Authors: Galiev, GB Kaminskii, VE Mokerov, VG Velikhovskii, LE
Citation: Gb. Galiev et al., The use of the amphoteric nature of impurity silicon atoms for obtaining planar p-n junctions on GaAs (111)A substrates by molecular beam epitaxy, SEMICONDUCT, 35(4), 2001, pp. 415-418
Investigation of distribution and redistribution of silicon in thin doped gallium-arsenide layers grown by molecular beam epitaxy on substrates with (100), (111)Ga, and (111)As orientations
Authors: Galiev, GB Kaminskii, VE Mokerov, VG Nevolin, VK Saraikin, VV Slepnev, YV
Citation: Gb. Galiev et al., Investigation of distribution and redistribution of silicon in thin doped gallium-arsenide layers grown by molecular beam epitaxy on substrates with (100), (111)Ga, and (111)As orientations, SEMICONDUCT, 34(7), 2000, pp. 741-745
A model of conduction in carbon nanopipe bundles and films
Authors: Kaminskii, VE
Citation: Ve. Kaminskii, A model of conduction in carbon nanopipe bundles and films, SEMICONDUCT, 34(10), 2000, pp. 1199-1202
Electric field effect on photoluminescence spectra of high-density two-dimensional electron gas in N-AlGaAs/GaAs/AlGaAs heterostructures
Authors: Guk, AV Velikovskii, LE Kaminskii, VE Mokerov, VG Fedorov, YV Khabarov, YV
Citation: Av. Guk et al., Electric field effect on photoluminescence spectra of high-density two-dimensional electron gas in N-AlGaAs/GaAs/AlGaAs heterostructures, DOKL PHYS, 45(9), 2000, pp. 435-438
Risultati: 1-4 |