Authors:
Verschaffelt, G
van der Vleuten, W
Creusen, M
Smalbrugge, E
van de Roer, TG
Karouta, F
Strijbos, RC
Danckaert, J
Veretennicoff, I
Ryvkin, B
Thienpont, H
Acket, GA
Citation: G. Verschaffelt et al., Polarization stabilization in vertical-cavity surface-emitting lasers through asymmetric current injection, IEEE PHOTON, 12(8), 2000, pp. 945-947
Authors:
Karouta, F
Jacobs, B
Vreugdewater, P
van Melick, NGH
Schoen, O
Protzmann, H
Heuken, M
Citation: F. Karouta et al., High etch rate and smooth morphology using a novel chemistry in reactive ion etching of GaN, EL SOLID ST, 2(5), 1999, pp. 240-241
Authors:
Creusen, M
de Bruyn, F
Karouta, F
van der Vleuten, WC
van de Roer, TG
Smalbrugge, E
van Roy, BH
Citation: M. Creusen et al., Sealing method of dry-etched AlAs/GaAs top mirrors in vertical cavity surface emitting lasers, EL SOLID ST, 2(2), 1999, pp. 83-85
Authors:
Weyher, JL
Zauner, ARA
Brown, PD
Karouta, F
Barcz, A
Wojdak, M
Porowski, S
Citation: Jl. Weyher et al., Growth of high quality, MOCVD grown Ga-polar GaN layers on GaN substrates after novel reactive ion etching, PHYS ST S-A, 176(1), 1999, pp. 573-577
Citation: F. Karouta et al., Chemical and complementary role of fluorine in a chlorine-based reactive ion etching of GaN, PHYS ST S-A, 176(1), 1999, pp. 755-758