AAAAAA

   
Results: 1-9 |
Results: 9
Highly chemical reactive ion etching of gallium nitride
Authors: Karouta, F Jacobs, B Moerman, I Jacobs, K Weyher, JL Porowski, S Crane, R Hageman, PR
Citation: F. Karouta et al., Highly chemical reactive ion etching of gallium nitride, MRS I J N S, 5, 2000, pp. NIL_768-NIL_773
Polarization stabilization in vertical-cavity surface-emitting lasers through asymmetric current injection
Authors: Verschaffelt, G van der Vleuten, W Creusen, M Smalbrugge, E van de Roer, TG Karouta, F Strijbos, RC Danckaert, J Veretennicoff, I Ryvkin, B Thienpont, H Acket, GA
Citation: G. Verschaffelt et al., Polarization stabilization in vertical-cavity surface-emitting lasers through asymmetric current injection, IEEE PHOTON, 12(8), 2000, pp. 945-947
High etch rate and smooth morphology using a novel chemistry in reactive ion etching of GaN
Authors: Karouta, F Jacobs, B Vreugdewater, P van Melick, NGH Schoen, O Protzmann, H Heuken, M
Citation: F. Karouta et al., High etch rate and smooth morphology using a novel chemistry in reactive ion etching of GaN, EL SOLID ST, 2(5), 1999, pp. 240-241
Sealing method of dry-etched AlAs/GaAs top mirrors in vertical cavity surface emitting lasers
Authors: Creusen, M de Bruyn, F Karouta, F van der Vleuten, WC van de Roer, TG Smalbrugge, E van Roy, BH
Citation: M. Creusen et al., Sealing method of dry-etched AlAs/GaAs top mirrors in vertical cavity surface emitting lasers, EL SOLID ST, 2(2), 1999, pp. 83-85
Final polishing of Ga-polar GaN substrates using reactive ion etching
Authors: Karouta, F Weyher, JL Jacobs, B Nowak, G Presz, A Grzegory, I Kaufmann, LMF
Citation: F. Karouta et al., Final polishing of Ga-polar GaN substrates using reactive ion etching, J ELEC MAT, 28(12), 1999, pp. 1448-1451
Growth of high quality, MOCVD grown Ga-polar GaN layers on GaN substrates after novel reactive ion etching
Authors: Weyher, JL Zauner, ARA Brown, PD Karouta, F Barcz, A Wojdak, M Porowski, S
Citation: Jl. Weyher et al., Growth of high quality, MOCVD grown Ga-polar GaN layers on GaN substrates after novel reactive ion etching, PHYS ST S-A, 176(1), 1999, pp. 573-577
Chemical and complementary role of fluorine in a chlorine-based reactive ion etching of GaN
Authors: Karouta, F Jacobs, B Schoen, O Heuken, M
Citation: F. Karouta et al., Chemical and complementary role of fluorine in a chlorine-based reactive ion etching of GaN, PHYS ST S-A, 176(1), 1999, pp. 755-758
High power CW output from low confinement asymmetric structure diode laser
Authors: Iordache, G Buda, M Acket, GA van de Roer, TG Kaufmann, LMF Karouta, F Jagadish, C Tan, HH
Citation: G. Iordache et al., High power CW output from low confinement asymmetric structure diode laser, ELECTR LETT, 35(2), 1999, pp. 148-149
Vertical integration of dual wavelength index guided lasers
Authors: Karouta, F Tan, HH Jagadish, C van Roy, BH
Citation: F. Karouta et al., Vertical integration of dual wavelength index guided lasers, ELECTR LETT, 35(10), 1999, pp. 815-817
Risultati: 1-9 |