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Results:
1-9
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Results: 9
Authors:
Kasic, A
Schubert, M
Rheinlander, B
Riede, V
Einfeldt, S
Hommel, D
Kuhn, B
Off, J
Scholz, F
Citation: A. Kasic et al., Effective carrier mass and mobility versus carrier concentration in p- andn-type alpha-GaN determined by infrared ellipsometry and Hall resistivity measurements, MAT SCI E B, 82(1-3), 2001, pp. 74-76
Authors:
Schubert, M
Kasic, A
Sik, J
Einfeldt, S
Hommel, D
Harle, V
Off, J
Scholz, F
Citation: M. Schubert et al., Phonons and free carriers in strained hexagonal GaN/AlGaN superlattices measured by infrared ellipsometry and Raman spectroscopy, MAT SCI E B, 82(1-3), 2001, pp. 178-181
Authors:
Kasic, A
Schubert, M
Kuhn, B
Scholz, F
Einfeldt, S
Hommel, D
Citation: A. Kasic et al., Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN, J APPL PHYS, 89(7), 2001, pp. 3720-3724
Authors:
Leibiger, G
Gottschalch, V
Kasic, A
Schubert, M
Citation: G. Leibiger et al., Phonon modes of GaNyP1-y (0.006 <= y <= 0.0285) measured by midinfrared spectroscopic ellipsometry, APPL PHYS L, 79(21), 2001, pp. 3407-3409
Authors:
Kasic, A
Schubert, M
Off, J
Scholz, F
Citation: A. Kasic et al., Strain and composition dependence of the E-1(TO) mode in hexagonal Al1-xInxN thin films, APPL PHYS L, 78(11), 2001, pp. 1526-1528
Authors:
Schubert, M
Kasic, A
Tiwald, TE
Woollam, JA
Harle, V
Scholz, F
Citation: M. Schubert et al., Phonons and free carriers in a strained hexagonal GaN-AlN superlattice measured by infrared ellipsometry and Raman spectroscopy, MRS I J N S, 5, 2000, pp. NIL_610-NIL_615
Authors:
Nassauer, S
Kasic, A
Rheinlander, B
Gottschalch, V
Kovac, J
Kvietkova, J
Benndorf, G
Citation: S. Nassauer et al., Excitonic effects of InAs monolayers in GaAs/AlGaAs-microcavities, MICROEL ENG, 51-2, 2000, pp. 401-407
Authors:
Kasic, A
Schubert, M
Einfeldt, S
Hommel, D
Tiwald, TE
Citation: A. Kasic et al., Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry, PHYS REV B, 62(11), 2000, pp. 7365-7377
Authors:
Schubert, M
Woollam, JA
Kasic, A
Rheinlander, B
Off, J
Kuhn, B
Scholz, F
Citation: M. Schubert et al., Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry, PHYS ST S-B, 216(1), 1999, pp. 655-658
Risultati:
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