Authors: Kasu, M Taniyasu, Y Kobayashi, N

Citation: M. Kasu et al., Formation of solid solution of Al1-xSixN (0 < x <= 12%) ternary alloy, JPN J A P 2, 40(10A), 2001, pp. L1048-L1050

Authors: Kasu, M Kobayashi, N

Citation: M. Kasu et N. Kobayashi, Field-emission characteristics and large current density of heavily Si-doped AlN and AlxGa1-xN (0.38 <= x < 1), APPL PHYS L, 79(22), 2001, pp. 3642-3644

Authors: Kasu, M Kobayashi, N

Citation: M. Kasu et N. Kobayashi, Spontaneous ridge-structure formation and large field emission of heavily Si-doped AlN, APPL PHYS L, 78(13), 2001, pp. 1835-1837

Authors: Kasu, M Kobayashi, N

Citation: M. Kasu et N. Kobayashi, Large electron field emission from high-quality heavily Si-doped AlN grownby MOVPE, J CRYST GR, 221, 2000, pp. 739-742

Authors: Kasu, M Kobayashi, N

Citation: M. Kasu et N. Kobayashi, Large and stable field-emission current from heavily Si-doped AlN grown bymetalorganic vapor phase epitaxy, APPL PHYS L, 76(20), 2000, pp. 2910-2912

Authors: Kasu, M Kobayashi, N Tanaka, H Mikami, O

Citation: M. Kasu et al., Nitrogen radical adsorption on InAs (001) surface studied by scanning tunneling microscopy and x-ray photoelectronic spectroscopy, APPL PHYS L, 73(25), 1998, pp. 3754-3756