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Results: 1-7 |
Results: 7
Gallium nitride based transistors
Authors: Xing, H Keller, S Wu, YF McCarthy, L Smorchkova, IP Buttari, D Coffie, R Green, DS Parish, G Heikman, S Shen, L Zhang, N Xu, JJ Keller, BP DenBaars, SP Mishra, UK
Citation: H. Xing et al., Gallium nitride based transistors, J PHYS-COND, 13(32), 2001, pp. 7139-7157
Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB
Authors: Keller, S Wu, YF Parish, G Ziang, NQ Xu, JJ Keller, BP DenBaars, SP Mishra, UK
Citation: S. Keller et al., Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB, IEEE DEVICE, 48(3), 2001, pp. 552-559
Very-high power density AlGaN/GaN HEMTs
Authors: Wu, YF Kapolnek, D Ibbetson, JP Parikh, P Keller, BP Mishra, UK
Citation: Yf. Wu et al., Very-high power density AlGaN/GaN HEMTs, IEEE DEVICE, 48(3), 2001, pp. 586-590
Solar-blind AlGaN-based inverted heterostructure photodiodes
Authors: Tarsa, EJ Kozodoy, P Ibbetson, J Keller, BP Parish, G Mishra, U
Citation: Ej. Tarsa et al., Solar-blind AlGaN-based inverted heterostructure photodiodes, APPL PHYS L, 77(3), 2000, pp. 316-318
3-9-GHz GaN-based microwave power amplifiers with L-C-R broad-band matching
Authors: Wu, YF York, RA Keller, S Keller, BP Mishra, UK
Citation: Yf. Wu et al., 3-9-GHz GaN-based microwave power amplifiers with L-C-R broad-band matching, IEEE MICR G, 9(8), 1999, pp. 314-316
GaN-based FETs for microwave power amplification
Authors: Wu, YF Keller, BP Keller, S Xu, JJ Thibeault, BJ Denbaars, SP Mishra, UK
Citation: Yf. Wu et al., GaN-based FETs for microwave power amplification, IEICE TR EL, E82C(11), 1999, pp. 1895-1905
The game's the same: Why gambling in cyberspace violates federal law
Authors: Keller, BP
Citation: Bp. Keller, The game's the same: Why gambling in cyberspace violates federal law, YALE LAW J, 108(7), 1999, pp. 1569-1609
Risultati: 1-7 |