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Results: 1-5 |
Results: 5

Authors: Rezazadeh, AA Khalid, AH Sotoodeh, M
Citation: Aa. Rezazadeh et al., Reliability investigation of implanted microwave InGaP/GaAs HBTs, MAT SCI E B, 80(1-3), 2001, pp. 274-278

Authors: Sotoodeh, M Khalid, AH Rezazadeh, AA
Citation: M. Sotoodeh et al., Empirical low-field mobility model for III-V compounds applicable in device simulation codes, J APPL PHYS, 87(6), 2000, pp. 2890-2900

Authors: Sotoodeh, M Sozzi, L Vinay, A Khalid, AH Hu, ZR Rezazadeh, AA Menozzi, R
Citation: M. Sotoodeh et al., Stepping toward standard methods of small-signal parameter extraction for HBT's, IEEE DEVICE, 47(6), 2000, pp. 1139-1151

Authors: Rezazadeh, AA Bashar, SA Sheng, H Amin, FA Khalid, AH Sotoodeh, M Crouch, MA Cattani, L Fantini, F Liou, JJ
Citation: Aa. Rezazadeh et al., Reliability investigation of InGaP/GaAs HBTs under current and temperaturestress, MICROEL REL, 39(12), 1999, pp. 1809-1816

Authors: Sotoodeh, M Khalid, AH Sheng, H Amin, FA Gokdemir, T Rezazadeh, AA Knights, AP Button, CC
Citation: M. Sotoodeh et al., Direct extraction and numerical simulation of the base and collector delaytimes in double heterojunction bipolar transistors, IEEE DEVICE, 46(6), 1999, pp. 1081-1086
Risultati: 1-5 |