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Results: 5
Effect of substrate illumination on the characteristics of an ion implanted GaAsOPFET
Authors:
Roy, NS Pal, BB Khan, RU
Citation:
Ns. Roy et al., Effect of substrate illumination on the characteristics of an ion implanted GaAsOPFET, IEE P-OPTO, 147(4), 2000, pp. 237-243
Frequency-dependent characteristics of an ion-implanted GaAs MESFET with opaque gate under illumination
Authors:
Roy, NS Pal, BB Khan, RU
Citation:
Ns. Roy et al., Frequency-dependent characteristics of an ion-implanted GaAs MESFET with opaque gate under illumination, J LIGHTW T, 18(2), 2000, pp. 221-229
Photoluminescence in low defect density a-C : H and a-C : H : N
Authors:
Anguita, JV Young, WT Khan, RU Silva, SRP Haq, S Sturland, I Pritchard, A
Citation:
Jv. Anguita et al., Photoluminescence in low defect density a-C : H and a-C : H : N, J NON-CRYST, 266, 2000, pp. 821-824
Light dependence of SOI MOSFET with nonuniform doping profile
Authors:
Abraham, GK Pal, BB Khan, RU
Citation:
Gk. Abraham et al., Light dependence of SOI MOSFET with nonuniform doping profile, IEEE DEVICE, 47(7), 2000, pp. 1469-1471
Analysis of GaAsOPFET with improved optical absorption under back illumination
Authors:
Roy, NS Pal, BB Khan, RU
Citation:
Ns. Roy et al., Analysis of GaAsOPFET with improved optical absorption under back illumination, IEEE DEVICE, 46(12), 1999, pp. 2350-2353
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