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Results: 6
Origin of an absorption band peaked at 5560 cm(-1) and related to divacancies in Si1-xGex
Authors:
Pomozov, YV Sosnin, MG Khirunenko, LI Abrosimov, NV Schroder, W
Citation:
Yv. Pomozov et al., Origin of an absorption band peaked at 5560 cm(-1) and related to divacancies in Si1-xGex, SEMICONDUCT, 35(8), 2001, pp. 890-894
Oxygen-containing radiation defects in Si1-xGex
Authors:
Pomozov, YV Sosnin, MG Khirunenko, LI Yashnik, VI Abrosimov, NV Schroder, W Hohne, M
Citation:
Yv. Pomozov et al., Oxygen-containing radiation defects in Si1-xGex, SEMICONDUCT, 34(9), 2000, pp. 989-993
Specific features of the behavior of oxygen in Sn-doped silicon
Authors:
Pomozov, YV Sosnin, MG Khirunenko, LI Yashnik, VI
Citation:
Yv. Pomozov et al., Specific features of the behavior of oxygen in Sn-doped silicon, SEMICONDUCT, 34(9), 2000, pp. 994-997
Oxygen and peculiarities of its precipitation in Si1-xGex
Authors:
Khirunenko, LI Pomozov, YV Sosnin, MG Abrosimov, NV Hohne, M Shroder, W
Citation:
Li. Khirunenko et al., Oxygen and peculiarities of its precipitation in Si1-xGex, PHYSICA B, 274, 1999, pp. 305-307
Oxygen in silicon doped with isovalent impurities
Authors:
Khirunenko, LI Pomozov, YV Sosnin, MG Shinkarenko, VK
Citation:
Li. Khirunenko et al., Oxygen in silicon doped with isovalent impurities, PHYSICA B, 274, 1999, pp. 317-321
Isotopic shifts of the low-energy excitations of interstitial oxygen in germanium
Authors:
Lassmann, K Linsenmaier, C Maier, F Zeller, F Haller, EE Itoh, KM Khirunenko, LI Pajot, B Mussig, H
Citation:
K. Lassmann et al., Isotopic shifts of the low-energy excitations of interstitial oxygen in germanium, PHYSICA B, 263, 1999, pp. 384-387
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