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Results: 1-6 |
Results: 6

Authors: Pomozov, YV Sosnin, MG Khirunenko, LI Abrosimov, NV Schroder, W
Citation: Yv. Pomozov et al., Origin of an absorption band peaked at 5560 cm(-1) and related to divacancies in Si1-xGex, SEMICONDUCT, 35(8), 2001, pp. 890-894

Authors: Pomozov, YV Sosnin, MG Khirunenko, LI Yashnik, VI Abrosimov, NV Schroder, W Hohne, M
Citation: Yv. Pomozov et al., Oxygen-containing radiation defects in Si1-xGex, SEMICONDUCT, 34(9), 2000, pp. 989-993

Authors: Pomozov, YV Sosnin, MG Khirunenko, LI Yashnik, VI
Citation: Yv. Pomozov et al., Specific features of the behavior of oxygen in Sn-doped silicon, SEMICONDUCT, 34(9), 2000, pp. 994-997

Authors: Khirunenko, LI Pomozov, YV Sosnin, MG Abrosimov, NV Hohne, M Shroder, W
Citation: Li. Khirunenko et al., Oxygen and peculiarities of its precipitation in Si1-xGex, PHYSICA B, 274, 1999, pp. 305-307

Authors: Khirunenko, LI Pomozov, YV Sosnin, MG Shinkarenko, VK
Citation: Li. Khirunenko et al., Oxygen in silicon doped with isovalent impurities, PHYSICA B, 274, 1999, pp. 317-321

Authors: Lassmann, K Linsenmaier, C Maier, F Zeller, F Haller, EE Itoh, KM Khirunenko, LI Pajot, B Mussig, H
Citation: K. Lassmann et al., Isotopic shifts of the low-energy excitations of interstitial oxygen in germanium, PHYSICA B, 263, 1999, pp. 384-387
Risultati: 1-6 |