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Results: 1-11 |
Results: 11
X-ray spectroscopic study of electronic structure of amorphous silicon andsilicyne
Authors: Mashin, AI Khokhlov, AF Domashevskaya, EP Terekhov, VA Mashin, NI
Citation: Ai. Mashin et al., X-ray spectroscopic study of electronic structure of amorphous silicon andsilicyne, SEMICONDUCT, 35(8), 2001, pp. 956-961
Structural measurements of amorphous silicon multilayers by the atomic force microscopy
Authors: Chuchmai, IA Khokhlov, AF Ershov, AV
Citation: Ia. Chuchmai et al., Structural measurements of amorphous silicon multilayers by the atomic force microscopy, PHYS LOW-D, 3-4, 2001, pp. 47-52
Vladimir Vasil'evich Zheleznyakov (on his seventieth birthday)
Authors: Alfimov, MV Andreev, AF Boyarchuk, AA Gaponov-Grekhov, AV Ginzburg, VL Zaitsev, VV Litvak, AG Syunyaev, RA Talanov, VI Trakhtengerts, VY Khanin, YI Khokhlov, AF
Citation: Mv. Alfimov et al., Vladimir Vasil'evich Zheleznyakov (on his seventieth birthday), USP FIZ NAU, 171(2), 2001, pp. 225-226
Polyconjugated silicon polymers
Authors: Razuvaev, AG Mashin, AI Shchepalov, AA Ignatov, SK Mashin, NI Khokhlov, AF
Citation: Ag. Razuvaev et al., Polyconjugated silicon polymers, J STRUCT CH, 42(3), 2001, pp. 347-354
Electron paramagnetic resonance in monoisotope high-purity silicon-28
Authors: Devyatykh, GG Gusev, AV Khokhlov, AF Maksimov, GA Ezhevskii, AA Guseinov, DV Dianov, EM
Citation: Gg. Devyatykh et al., Electron paramagnetic resonance in monoisotope high-purity silicon-28, DOKL PHYS C, 376(1-3), 2001, pp. 8-11
Absorption features in a-Si/ZrOx nanostructures
Authors: Khokhlov, AF Chuchmai, IA Ershov, AV
Citation: Af. Khokhlov et al., Absorption features in a-Si/ZrOx nanostructures, SEMICONDUCT, 34(3), 2000, pp. 344-347
Multiple bonds in hydrogen-free amorphous silicon
Authors: Mashin, AI Khokhlov, AF
Citation: Ai. Mashin et Af. Khokhlov, Multiple bonds in hydrogen-free amorphous silicon, SEMICONDUCT, 33(8), 1999, pp. 911-914
Conductivity and absorption edge of amorphous silicyne
Authors: Mashin, AI Khokhlov, AF
Citation: Ai. Mashin et Af. Khokhlov, Conductivity and absorption edge of amorphous silicyne, SEMICONDUCT, 33(11), 1999, pp. 1251-1253
Role of impurities in the formation of silicyne (long-chain silicon): theory and experiment
Authors: Mashin, AI Khokhlov, AF Ignatov, SK Shchepalov, AA Razuvaev, AG
Citation: Ai. Mashin et al., Role of impurities in the formation of silicyne (long-chain silicon): theory and experiment, SEMICONDUCT, 33(10), 1999, pp. 1139-1144
Ion implantation doping of amorphous Si1-xGex films
Authors: Ershov, AV Mashin, AI Khokhlov, AF
Citation: Av. Ershov et al., Ion implantation doping of amorphous Si1-xGex films, IAN FIZ, 63(2), 1999, pp. 278-281
Visible luminescence of erbium-doped silicon films grown by sublimation molecular beam epitaxy with a potential applied to the substrate
Authors: Shengurov, VG Svetlov, SP Pavlov, DA Khokhlov, AF Krasilnic, ZF Carius, R Wagner, H
Citation: Vg. Shengurov et al., Visible luminescence of erbium-doped silicon films grown by sublimation molecular beam epitaxy with a potential applied to the substrate, IAN FIZ, 63(2), 1999, pp. 406-410
Risultati: 1-11 |