ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

Fully relaxed Si0.7Ge0.3 buffers grown on patterned silicon substrates forhetero-CMOS transistors

Authors: Wohl, G Kasper, E Hackbarth, T Kibbel, H Klose, M Ernst, F

Citation: G. Wohl et al., Fully relaxed Si0.7Ge0.3 buffers grown on patterned silicon substrates forhetero-CMOS transistors, J MAT S-M E, 12(4-6), 2001, pp. 235-240

Thin SiGe buffer layer growth by in situ low energy hydrogen plasma preparation

Authors: Kuchenbecker, J Kibbel, H Muthsam, P Konig, U

Citation: J. Kuchenbecker et al., Thin SiGe buffer layer growth by in situ low energy hydrogen plasma preparation, THIN SOL FI, 389(1-2), 2001, pp. 146-152

Enhanced performance of silicon based photodetectors using silicon/germanium nanostructures

Authors: Konle, J Presting, H Kibbel, H Thonke, K Sauer, R

Citation: J. Konle et al., Enhanced performance of silicon based photodetectors using silicon/germanium nanostructures, SOL ST ELEC, 45(11), 2001, pp. 1921-1925

Novel mid-infrared silicon/germanium detector concepts

Authors: Presting, H Konle, J Hepp, M Kibbel, H Thonke, K Sauer, R Corbin, E Jaros, M

Citation: H. Presting et al., Novel mid-infrared silicon/germanium detector concepts, OPT ENG, 39(10), 2000, pp. 2624-2641

Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates forSiGe n-channel HMOSFETs

Authors: Wohl, G Dudek, V Graf, M Kibbel, H Herzog, HJ Klose, M

Citation: G. Wohl et al., Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates forSiGe n-channel HMOSFETs, THIN SOL FI, 369(1-2), 2000, pp. 175-181

Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation

Authors: Hollander, B Mantl, S Liedtke, R Mesters, S Herzog, HJ Kibbel, H Hackbarth, T

Citation: B. Hollander et al., Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation, NUCL INST B, 148(1-4), 1999, pp. 200-210

Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogenimplantation

Authors: Mantl, S Hollander, B Liedtke, R Mesters, S Herzog, HJ Kibbel, H Hackbarth, T

Citation: S. Mantl et al., Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogenimplantation, NUCL INST B, 147(1-4), 1999, pp. 29-34

Collector-up SiGe heterojunction bipolar transistors

Authors: Gruhle, A Kibbel, H Mahner, C Mroczek, W

Citation: A. Gruhle et al., Collector-up SiGe heterojunction bipolar transistors, IEEE DEVICE, 46(7), 1999, pp. 1510-1513

The reduction of base dopant outdiffusion in SiGe heterojunction bipolar transistors by carbon doping

Authors: Gruhle, A Kibbel, H Konig, U

Citation: A. Gruhle et al., The reduction of base dopant outdiffusion in SiGe heterojunction bipolar transistors by carbon doping, APPL PHYS L, 75(9), 1999, pp. 1311-1313

Assessment of transport parameters for the design of high speed Si/SiGe HBTs with compositionally graded base

Authors: Weller, J Jorke, H Strohm, K Luy, JF Kibbel, H Herzog, HJ Sauer, R

Citation: J. Weller et al., Assessment of transport parameters for the design of high speed Si/SiGe HBTs with compositionally graded base, THIN SOL FI, 336(1-2), 1998, pp. 137-140

Tunnelling currents in very narrow p(+)-n(+) junctions

Authors: Reitemann, G Kasper, E Kibbel, H Jorke, H

Citation: G. Reitemann et al., Tunnelling currents in very narrow p(+)-n(+) junctions, THIN SOL FI, 336(1-2), 1998, pp. 344-346

Risultati: 1-11 |