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Results:
1-7
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Results: 7
Authors:
Harafuji, K
Hasegawa, Y
Ishibashi, A
Tsujimura, A
Kidoguchi, I
Ban, Y
Ohnaka, K
Citation: K. Harafuji et al., Complex flow and gas-phase reactions in a horizontal reactor for GaN metalorganic vapor phase epitaxy, JPN J A P 1, 39(11), 2000, pp. 6180-6190
Authors:
Kidoguchi, I
Ishibashi, A
Sugahara, G
Tsujimura, A
Ban, Y
Citation: I. Kidoguchi et al., Improvement of crystalline quality in GaN films by air-bridged lateral epitaxial growth, JPN J A P 2, 39(5B), 2000, pp. L453-L456
Authors:
Ishibashi, A
Kidoguchi, I
Tsujimura, A
Hasegawa, Y
Ban, YB
Ohata, T
Watanabe, M
Hayashi, T
Citation: A. Ishibashi et al., Systematic studies on optical gain spectra in GaInN/GaN-MQWs, J LUMINESC, 87-9, 2000, pp. 1271-1273
Authors:
Ishibashi, A
Kidoguchi, I
Sugahara, G
Ban, Y
Citation: A. Ishibashi et al., High-quality GaN films obtained by air-bridged lateral epitaxial growth, J CRYST GR, 221, 2000, pp. 338-344
Authors:
Kidoguchi, I
Ishibashi, A
Sugahara, G
Ban, Y
Citation: I. Kidoguchi et al., Air-bridged lateral epitaxial overgrowth of GaN thin films, APPL PHYS L, 76(25), 2000, pp. 3768-3770
Authors:
Tsujimura, A
Ishibashi, A
Hasegawa, Y
Kamiyama, S
Kidoguchi, I
Otsuka, N
Miyanaga, R
Sugahara, G
Suzuki, M
Kume, M
Harafuji, K
Ban, Y
Citation: A. Tsujimura et al., Room-temperature CW operation of GaInN multiple quantum well laser diodes with optimized indium content, PHYS ST S-A, 176(1), 1999, pp. 53-57
Authors:
Tsujimura, A
Hasegawa, Y
Ishibashi, A
Kamiyama, S
Kidoguchi, I
Miyanaga, R
Suzuki, M
Kume, M
Harafuji, K
Ban, Y
Citation: A. Tsujimura et al., Room-temperature continuous-wave operation of GaInN multiquantum well laser diodes with low indium content, ELECTR LETT, 35(12), 1999, pp. 998-999
Risultati:
1-7
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