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Results:
1-8
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Results: 8
Authors:
Ovchinnikov, V
Malinin, A
Sokolov, V
Kilpela, O
Sinkkonen, J
Citation: V. Ovchinnikov et al., Photo and electroluminescence from PECVD grown a-Si : H/SiO2 multilayers, OPT MATER, 17(1-2), 2001, pp. 103-106
Authors:
Khriachtchev, L
Kilpela, O
Karirinne, S
Keranen, J
Lepisto, T
Citation: L. Khriachtchev et al., Substrate-dependent crystallization and enhancement of visible photoluminescence in thermal annealing of Si/SiO2 superlattices, APPL PHYS L, 78(3), 2001, pp. 323-325
Authors:
Novikov, SV
Kilpela, O
Sinkkonen, J
Khriachtchev, L
Citation: Sv. Novikov et al., On light-emitting mechanism in Si/SiO2 superlattices grown by molecular beam deposition, MICROEL ENG, 51-2, 2000, pp. 505-511
Authors:
Khriachtchev, L
Novikov, S
Kilpela, O
Citation: L. Khriachtchev et al., Optics of Si/SiO2 superlattices: Application to Raman scattering and photoluminescence measurements, J APPL PHYS, 87(11), 2000, pp. 7805-7813
Authors:
Kilpela, O
Karppinen, M
Novikov, S
Sokolov, V
Yliniemi, S
Citation: O. Kilpela et al., Absorption in a-Si/SiO2 superlattices, PHYS SCR, T79, 1999, pp. 95-98
Authors:
Majamaa, T
Kilpela, O
Citation: T. Majamaa et O. Kilpela, Effect of oxidation temperature on the electrical characteristics of ultrathin silicon dioxide layers plasma oxidized in ultrahigh vacuum, PHYS SCR, T79, 1999, pp. 259-262
Authors:
Majamaa, T
Kilpela, O
Novikov, S
Sinkkonen, J
Citation: T. Majamaa et al., Annealing of ultrathin silicon dioxide layers plasma oxidized in ultrahighvacuum, APPL SURF S, 142(1-4), 1999, pp. 351-355
Authors:
Khriachtchev, L
Rasanen, M
Novikov, S
Kilpela, O
Sinkkonen, J
Citation: L. Khriachtchev et al., Raman scattering from very thin Si layers of Si/SiO2 superlattices: Experimental evidence of structural modification in the 0.8-3.5 nm thickness region, J APPL PHYS, 86(10), 1999, pp. 5601-5608
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