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Results: 26-33/33
Authors:
King, YC
King, TJ
Hu, CM
Citation: Yc. King et al., A long-refresh dynamic/quasi-nonvolatile memory device with 2-nm tunnelingoxide, IEEE ELEC D, 20(8), 1999, pp. 409-411
Authors:
Lee, WC
King, TJ
Hu, CM
Citation: Wc. Lee et al., Evidence of hole direct tunneling through ultrathin gate oxide using P+ Poly-SiGe gate, IEEE ELEC D, 20(6), 1999, pp. 268-270
Authors:
Lee, WC
Watson, B
King, TJ
Hu, CM
Citation: Wc. Lee et al., Enhancement of PMOS device performance with poly-SiGe gate, IEEE ELEC D, 20(5), 1999, pp. 232-234
Authors:
Lee, WC
King, TJ
Hu, CM
Citation: Wc. Lee et al., Observation of reduced boron penetration and gate depletion for poly-Si0.8Ge0.2 gated PMOS devices, IEEE ELEC D, 20(1), 1999, pp. 9-11
Authors:
Lee, Y
Gough, RA
King, TJ
Ji, Q
Leung, KN
McGill, RA
Ngo, VV
Williams, MD
Zahir, N
Citation: Y. Lee et al., Maskless ion beam lithography system, MICROEL ENG, 46(1-4), 1999, pp. 469-472
Authors:
Yamamichi, S
Yamamichi, A
Park, DG
King, TJ
Hu, CM
Citation: S. Yamamichi et al., Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba, Sr)TiO3 thin-film capacitors for Gbit-Scale DRAM's, IEEE DEVICE, 46(2), 1999, pp. 342-347
Authors:
King, TJ
Newson, DJ
Citation: Tj. King et Dj. Newson, Advances in data networking, BT TELECOMM, 17, 1999, pp. 1-20
Authors:
Lee, WC
King, YC
King, TJ
Hu, CM
Citation: Wc. Lee et al., Observation of reduced poly-gate depletion effect for poly-Si0.8Ge0.2-gated NMOS devices, EL SOLID ST, 1(1), 1998, pp. 58-59