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Results: 1-25/30
Authors:
Chen, IS
Roeder, JF
Kim, DJ
Maria, JP
Kingon, AI
Citation: Is. Chen et al., Metalorganic chemical vapor deposition Pb(Zr,Ti)O-3 and selected lower electrode structures as a pathway to integrated piezoelectric microelectromechanical systems, J VAC SCI B, 19(5), 2001, pp. 1833-1840
Authors:
Baumann, PK
Streiffer, SK
Bai, GR
Ghosh, K
Auciello, O
Thompson, C
Stemmer, S
Rao, RA
Eom, CB
Xu, F
Trolier-McKinstry, S
Kim, DJ
Maria, JP
Kingon, AI
Citation: Pk. Baumann et al., Epitaxial Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films grown by MOCVD, INTEGR FERR, 35(1-4), 2001, pp. 1881-1888
Authors:
Yoon, SG
Kingon, AI
Kim, SH
Citation: Sg. Yoon et al., Electrical properties of Pb1-xLax(ZryTi1-y)(1-x/4)O-3 thin films with various iridium-based top electrodes, INTEGR FERR, 33(1-4), 2001, pp. 155-164
Authors:
Hugon, MC
Varniere, F
Letendu, F
Agius, B
Vickridge, L
Kingon, AI
Citation: Mc. Hugon et al., O-18 study of the oxidation of reactively sputtered Ti1-xAlxN barrier, J MATER RES, 16(9), 2001, pp. 2591-2599
Authors:
Yoon, SG
Wicaksana, D
Kim, DJ
Kim, SH
Kingon, AI
Citation: Sg. Yoon et al., Effect of hydrogen on true leakage current characteristics of (Pb,La)(Zr,Ti)O-3 thin-film capacitors with Pt- or Ir-based top electrodes, J MATER RES, 16(4), 2001, pp. 1185-1189
Authors:
Maria, JP
Wicaksana, D
Kingon, AI
Busch, B
Schulte, H
Garfunkel, E
Gustafsson, T
Citation: Jp. Maria et al., High temperature stability in lanthanum and zirconia-based gate dielectrics, J APPL PHYS, 90(7), 2001, pp. 3476-3482
Authors:
Yoon, SG
Kingon, AI
Citation: Sg. Yoon et Ai. Kingon, Recovery characteristics of hydrogen-damaged (Pb,La)(Zr,Ti)O-3 capacitors with Pt and IrO2 top electrodes, J ELCHEM SO, 148(7), 2001, pp. F137-F139
Authors:
Stemmer, S
Maria, JP
Kingon, AI
Citation: S. Stemmer et al., Structure and stability of La2O3/SiO2 layers on Si(001), APPL PHYS L, 79(1), 2001, pp. 102-104
Authors:
Kim, SH
Woo, HJ
Ha, J
Hwang, CS
Kim, HR
Kingon, AI
Citation: Sh. Kim et al., Thickness effects on imprint in chemical-solution-derived (Pb, La)(Zr, Ti)O-3 thin films, APPL PHYS L, 78(19), 2001, pp. 2885-2887
Authors:
Letendu, F
Hugon, MC
Desvignes, JM
Agius, B
Vickridge, I
Kim, DJ
Kingon, AI
Citation: F. Letendu et al., Oxidation resistance of TaSiN diffusion barriers, INTEGR FERR, 31(1-4), 2000, pp. 315-322
Authors:
Hugon, MC
Desvignes, JM
Agius, B
Vickridge, IC
Kim, DJ
Kingon, AI
Citation: Mc. Hugon et al., Narrow resonance profiling study of the oxidation of reactively sputtered Ti1-xAlxN thin films, NUCL INST B, 161, 2000, pp. 578-583
Authors:
Kingon, AI
Maria, JP
Streiffer, SK
Citation: Ai. Kingon et al., Alternative dielectrics to silicon dioxide for memory and logic devices, NATURE, 406(6799), 2000, pp. 1032-1038
Authors:
Yoon, SG
Kingon, AI
Kim, SH
Citation: Sg. Yoon et al., Relaxation and leakage current characteristics of Pb1-xLax(ZryTi1-y)(1-x/4)O3 thin films with various Ir-based top electrodes, J APPL PHYS, 88(11), 2000, pp. 6690-6695
Authors:
Christman, JA
Kim, SH
Maiwa, H
Maria, JP
Rodriguez, BJ
Kingon, AI
Nemanich, RJ
Citation: Ja. Christman et al., Spatial variation of ferroelectric properties in Pb(Zr-0.3, Ti-0.7)O-3 thin films studied by atomic force microscopy, J APPL PHYS, 87(11), 2000, pp. 8031-8034
Authors:
Kim, SH
Lee, DS
Hwang, CS
Kim, DJ
Kingon, AI
Citation: Sh. Kim et al., Thermally induced voltage offsets in Pb(Zr,Ti)O-3 thin films, APPL PHYS L, 77(19), 2000, pp. 3036-3038
Authors:
Kim, SH
Kim, DJ
Maria, JP
Kingon, AI
Streiffer, SK
Im, J
Auciello, O
Krauss, AR
Citation: Sh. Kim et al., Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties, APPL PHYS L, 76(4), 2000, pp. 496-498
Authors:
Maiwa, H
Christman, JA
Kim, SH
Kim, DJ
Maria, JP
Chen, B
Streiffer, SK
Kingon, AI
Citation: H. Maiwa et al., Measurement of piezoelectric displacements of Pb(Zr, Ti)O-3 thin films using a double-beam interferometer, JPN J A P 1, 38(9B), 1999, pp. 5402-5405
Authors:
Kingon, AI
Streiffer, SK
Citation: Ai. Kingon et Sk. Streiffer, Ferroelectric films and devices, CURR OP SOL, 4(1), 1999, pp. 39-44
Authors:
Kim, SH
Kim, DJ
Im, J
Streiffer, SK
Auciello, O
Maria, JP
Kingon, AI
Citation: Sh. Kim et al., Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films, INTEGR FERR, 26(1-4), 1999, pp. 955-970
Authors:
Kim, DJ
Kim, SH
Maria, JP
Kingon, AI
Citation: Dj. Kim et al., Influences on imprint failure of SrBi2Ta2O9 thin film capacitors, INTEGR FERR, 25(1-4), 1999, pp. 691-701
Authors:
Maiwa, H
Maria, JP
Christman, JA
Kim, SH
Streiffer, K
Kingon, AI
Citation: H. Maiwa et al., Measurement and calculation of PZT thin film longitudinal piezoelectric coefficients, INTEGR FERR, 24(1-4), 1999, pp. 139-146
Authors:
Kim, SH
Kim, DJ
Im, J
Kim, CE
Kingon, AI
Citation: Sh. Kim et al., Ferroelectric properties of new chemical solution derived SBT thin films for non-volatile memory devices, J SOL-GEL S, 16(1-2), 1999, pp. 57-63
Authors:
Kim, SH
Kim, DJ
Streiffer, SK
Kingon, AI
Citation: Sh. Kim et al., Preparation and ferroelectric properties of mixed composition layered leadzirconate titanate thin films for nonvolatile memory applications, J MATER RES, 14(6), 1999, pp. 2476-2483
Authors:
Kim, SH
Kim, DJ
Hong, J
Streiffer, SK
Kingon, AI
Citation: Sh. Kim et al., Imprint and fatigue properties of chemical solution derived Pb1-xLax(ZryTi1-y)(1-x/4)O-3 thin films, J MATER RES, 14(4), 1999, pp. 1371-1377
Authors:
Kim, SH
Hong, JG
Streiffer, SK
Kingon, AI
Citation: Sh. Kim et al., The effect of RuO2/Pt hybrid bottom electrode structure on the leakage andfatigue properties of chemical solution derived Pb(ZrxTi1-x)O-3 thin films, J MATER RES, 14(3), 1999, pp. 1018-1025