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Results: 1-5 |
Results: 5

Authors: Gotthold, D Govindaraju, S Reifsnider, J Kinsey, G Campbell, J Holmes, A
Citation: D. Gotthold et al., Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for photodiodes, J VAC SCI B, 19(4), 2001, pp. 1400-1403

Authors: Kinsey, G
Citation: G. Kinsey, Newsbreaks - Waveguide avalanche photodiode shows promise for 1550 nm, LASER FOC W, 36(7), 2000, pp. 9-9

Authors: Lenox, C Nie, H Kinsey, G Hansing, C Campbell, JC Holmes, AL Streetman, BG
Citation: C. Lenox et al., Substrate preparation and interface grading in InGaAs InAlAs photodiodes grown on InP by molecular-beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1175-1179

Authors: Lenox, C Nie, H Yuan, P Kinsey, G Homles, AL Streetman, BG Campbell, JC
Citation: C. Lenox et al., Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz, IEEE PHOTON, 11(9), 1999, pp. 1162-1164

Authors: Lenox, C Nie, H Kinsey, G Yuan, P Holmes, AL Streetman, BG Campbell, JC
Citation: C. Lenox et al., Improved optical response of superlattice graded InAlAs/InGaAs p-i-n photodetectors, APPL PHYS L, 73(23), 1998, pp. 3405-3407
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