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Results: 1-12 |
Results: 12
Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanisms of their formation
Authors: Volz, K Klatt, C Ensinger, W
Citation: K. Volz et al., Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanisms of their formation, NUCL INST B, 175, 2001, pp. 569-574
Charge equilibration of energetic He ions in the Si < 100 > channel
Authors: Azevedo, GD Kaschny, JRA Behar, M Grande, PL Klatt, C Kalbitzer, S
Citation: Gd. Azevedo et al., Charge equilibration of energetic He ions in the Si < 100 > channel, NUCL INST B, 168(3), 2000, pp. 321-328
Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon-nitrogen-hydrogen system
Authors: Volz, K Rauschenbach, B Klatt, C Ensinger, W
Citation: K. Volz et al., Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon-nitrogen-hydrogen system, NUCL INST B, 166, 2000, pp. 75-81
Charge equilibration of He ions in the Si < 100 > channel
Authors: Azevedo, CD Kaschny, JRA Behar, M Grande, PL Klatt, C Kalbitzer, S
Citation: Cd. Azevedo et al., Charge equilibration of He ions in the Si < 100 > channel, NUCL INST B, 161, 2000, pp. 96-100
Angular dependence of the electronic stopping power of Li ions channeled around the Si < 1 0 0 > direction
Authors: Azevedo, GD Dias, JF dos Santos, JHR Grande, PL Behar, M Klatt, C Kalbitzer, S
Citation: Gd. Azevedo et al., Angular dependence of the electronic stopping power of Li ions channeled around the Si < 1 0 0 > direction, NUCL INST B, 161, 2000, pp. 145-149
Electronic stopping power of [1 0 0] axial channeled Li-7 ions in Si crystals
Authors: Dias, JF Azevedo, GD Behar, M Grande, PL Klatt, C Kalbitzer, S
Citation: Jf. Dias et al., Electronic stopping power of [1 0 0] axial channeled Li-7 ions in Si crystals, NUCL INST B, 148(1-4), 1999, pp. 164-167
Charge equilibration process for channeled He ions along the Si < 100 > direction
Authors: Azevedo, GD Kaschny, JRA Dias, JF Grande, PL Behar, M Klatt, C Kalbitzer, S
Citation: Gd. Azevedo et al., Charge equilibration process for channeled He ions along the Si < 100 > direction, NUCL INST B, 148(1-4), 1999, pp. 168-171
Post-implantation bombardment assisted formation of colloidal Au in silica
Authors: Ila, D Williams, EK Smith, CC Poker, DB Hensley, DK Klatt, C Kalbitzer, S
Citation: D. Ila et al., Post-implantation bombardment assisted formation of colloidal Au in silica, NUCL INST B, 148(1-4), 1999, pp. 1012-1016
Ion beam synthesis of Au and Cu nanoclusters in MgO
Authors: Zimmerman, RL Ila, D Williams, EK Poker, DB Hensley, DK Klatt, C Kalbitzer, S
Citation: Rl. Zimmerman et al., Ion beam synthesis of Au and Cu nanoclusters in MgO, NUCL INST B, 148(1-4), 1999, pp. 1064-1068
Ion beam modification of PES, PS and PVC polymers
Authors: Evelyn, AL Ila, D Zimmerman, RL Bhat, K Poker, DB Hensley, DK Klatt, C Kalbitzer, S Just, N Drevet, C
Citation: Al. Evelyn et al., Ion beam modification of PES, PS and PVC polymers, NUCL INST B, 148(1-4), 1999, pp. 1141-1145
Universal fit formula for electronic stopping of all ions in carbon and silicon
Authors: Konac, G Klatt, C Kalbitzer, S
Citation: G. Konac et al., Universal fit formula for electronic stopping of all ions in carbon and silicon, NUCL INST B, 146(1-4), 1998, pp. 106-113
H-1 tunneling transport in crystalline Si of different doping
Authors: Fabian, S Kalbitzer, S Klatt, C Behar, M Langpape, C
Citation: S. Fabian et al., H-1 tunneling transport in crystalline Si of different doping, PHYS REV B, 58(24), 1998, pp. 16144-16153
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