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Citation: Pb. Klein et al., Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors, ELECTR LETT, 37(10), 2001, pp. 661-662

Authors: Klein, PB Binari, SC Ikossi, K Wickenden, AE Koleske, DD Henry, RL

Citation: Pb. Klein et al., Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy, APPL PHYS L, 79(21), 2001, pp. 3527-3529

Authors: Klein, PB Binari, SC Freitas, JA Wickenden, AE

Citation: Pb. Klein et al., Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors, J APPL PHYS, 88(5), 2000, pp. 2843-2852

Authors: Maltez, RL Liliental-Weber, Z Washburn, J Behar, M Klein, PB Specht, P Weber, ER

Citation: Rl. Maltez et al., Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs, J APPL PHYS, 85(2), 1999, pp. 1105-1113

Authors: Klein, PB Freitas, JA Binari, SC Wickenden, AE

Citation: Pb. Klein et al., Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors, APPL PHYS L, 75(25), 1999, pp. 4016-4018