AAAAAA
Results: 1-25/35
Authors:
Kohn, E
Ebert, W
Adamschik, M
Schmid, P
Denisenko, A
Citation: E. Kohn et al., Diamond-based MEMS devices, NEW DIAM FR, 11(2), 2001, pp. 81-100
Authors:
Adamschik, M
Muller, R
Gluche, P
Floter, A
Limmer, W
Sauer, R
Kohn, E
Citation: M. Adamschik et al., Analysis of piezoresistive properties of CVD-diamond films on silicon, DIAM RELAT, 10(9-10), 2001, pp. 1670-1675
Authors:
Kohn, E
Adamschik, M
Schmid, P
Ertl, S
Floter, A
Citation: E. Kohn et al., Diamond electro-mechanical micro devices - technology and performance, DIAM RELAT, 10(9-10), 2001, pp. 1684-1691
Authors:
Denisenko, A
Aleksov, A
Kohn, E
Citation: A. Denisenko et al., pH sensing by surface-doped diamond and effect of the diamond surface termination, DIAM RELAT, 10(3-7), 2001, pp. 667-672
Authors:
Adamschik, M
Hinz, M
Maier, C
Schmid, P
Seliger, H
Hofer, EP
Kohn, E
Citation: M. Adamschik et al., Diamond micro system for bio-chemistry, DIAM RELAT, 10(3-7), 2001, pp. 722-730
Authors:
Robertson, J
Kawarada, H
Kohn, E
Sitar, Z
Citation: J. Robertson et al., Proceedings of the 11th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), Porto,Portugal, 3-8 September 2000 - Preface, DIAM RELAT, 10(3-7), 2001, pp. XV-XV
Authors:
Daumiller, I
Theron, D
Gaquiere, C
Vescan, A
Dietrich, R
Wieszt, A
Leier, H
Vetury, R
Mishra, UK
Smorchkova, IP
Keller, S
Nguyen, NX
Nguyen, C
Kohn, E
Citation: I. Daumiller et al., Current instabilities in GaN-based devices, IEEE ELEC D, 22(2), 2001, pp. 62-64
Authors:
Bergmaier, A
Dollinger, G
Aleksov, A
Gluche, P
Kohn, E
Citation: A. Bergmaier et al., Deuterium depth profiles at CVD diamond surfaces, SURF SCI, 481(1-3), 2001, pp. L433-L436
Authors:
Kohn, E
Adamschik, M
Schmid, P
Denisenko, A
Aleksov, A
Ebert, W
Citation: E. Kohn et al., Prospects of diamond devices, J PHYS D, 34(16), 2001, pp. R77-R85
Authors:
Kohn, E
Citation: E. Kohn, 'The member from Michigan': The unofficial diplomacy and political isolation of John Charlton, 1892-1903, CAN HIST R, 82(2), 2001, pp. 283-306
Authors:
Doong, H
Price, J
Kim, YS
Gasbarre, C
Probst, J
Liotta, LA
Blanchette, J
Rizzo, K
Kohn, E
Citation: H. Doong et al., CAIR-1/BAG-3 forms an EGF-regulated ternary complex with phospholipase C-gamma and Hsp70/Hsc70, ONCOGENE, 19(38), 2000, pp. 4385-4395
Authors:
Ertl, S
Adamschik, M
Schmid, P
Gluche, P
Floter, A
Kohn, E
Citation: S. Ertl et al., Surface micromachined diamond microswitch, DIAM RELAT, 9(3-6), 2000, pp. 970-974
Authors:
Denisenko, A
Aleksov, A
Pribil, A
Gluche, P
Ebert, W
Kohn, E
Citation: A. Denisenko et al., Hypothesis on the conductivity mechanism in hydrogen terminated diamond films, DIAM RELAT, 9(3-6), 2000, pp. 1138-1142
Authors:
Aleksov, A
Denisenko, A
Kohn, E
Citation: A. Aleksov et al., Prospects of bipolar diamond devices, SOL ST ELEC, 44(2), 2000, pp. 369-375
Authors:
Berger, AC
Alexander, HR
Tang, GQ
Wu, PS
Hewitt, SM
Turner, E
Kruger, E
Figg, WD
Grove, A
Kohn, E
Stern, D
Libutti, SK
Citation: Ac. Berger et al., Endothelial monocyte activating polypeptide II induces endothelial cell apoptosis and may inhibit tumor angiogenesis, MICROVASC R, 60(1), 2000, pp. 70-80
Authors:
Hock, G
Hackbarth, T
Kab, N
Herzog, HJ
Enciso, M
Aniel, F
Crozat, P
Adde, R
Kohn, E
Konig, U
Citation: G. Hock et al., 0.1 mu m gate length p-type Ge/Si0.4Ge0.6 MODFET with 135GHz f(max), ELECTR LETT, 36(16), 2000, pp. 1428-1429
Authors:
Hock, G
Kohn, E
Rosenblad, C
von Kanel, H
Herzog, HJ
Konig, U
Citation: G. Hock et al., High hole mobility in Si0.17Ge0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition, APPL PHYS L, 76(26), 2000, pp. 3920-3922
Authors:
Kohn, E
Gluche, P
Adamschik, M
Citation: E. Kohn et al., Diamond MEMS - a new emerging technology, DIAM RELAT, 8(2-5), 1999, pp. 934-940
Authors:
Aleksov, A
Vescan, A
Kunze, M
Gluche, P
Ebert, W
Kohn, E
Bergmaier, A
Dollinger, G
Citation: A. Aleksov et al., Diamond junction FETs based on delta-doped channels, DIAM RELAT, 8(2-5), 1999, pp. 941-945
Authors:
Ebert, W
Adamschik, M
Gluche, P
Floter, A
Kohn, E
Citation: W. Ebert et al., High-temperature diamond capacitor, DIAM RELAT, 8(10), 1999, pp. 1875-1877
Authors:
Sandor, V
Reed, E
Sarosy, G
Middleton, LP
Davis, P
Kohn, E
Citation: V. Sandor et al., Synchronous inflammatory breast cancer and advanced ovarian carcinoma: A case with prolonged disease-free survival, ANN ONCOL, 10(5), 1999, pp. 585-588
Authors:
Daumiller, I
Kirchner, C
Kamp, M
Ebeling, KJ
Kohn, E
Citation: I. Daumiller et al., Evaluation of the temperature stability of AlGaN/GaN heterostructure FET's, IEEE ELEC D, 20(9), 1999, pp. 448-450
Authors:
Kunze, M
Lee, LH
Chung, HY
Kohn, E
Citation: M. Kunze et al., First demonstration of low temperature grown InP-channel HFET transferred onto GaAs substrate, SOL ST ELEC, 43(8), 1999, pp. 1535-1540
Authors:
Matsunami, K
Takeyama, T
Usunami, T
Kishimoto, S
Maezawa, K
Mizutani, T
Tomizawa, M
Schmid, P
Lipka, KM
Kohn, E
Citation: K. Matsunami et al., Potential profile measurement of GaAs MESFETs passivated with low-temperature grown GaAs layer by Kelvin probe force microscopy, SOL ST ELEC, 43(8), 1999, pp. 1547-1553
Authors:
Daumiller, I
Schmid, P
Kohn, E
Kirchner, C
Kamp, M
Ebeling, KJ
Pond, LL
Weitzel, C
Citation: I. Daumiller et al., DC and RF characteristics of AlN/GaN doped channel heterostructure field effect transister, PHYS ST S-A, 176(1), 1999, pp. 179-181