Authors:
Budzulyak, SI
Gorin, AE
Ermakov, VM
Kolomoets, VV
Venger, EF
Verma, P
Yamada, M
Liarokapis, E
Tunstall, DP
Citation: Si. Budzulyak et al., Strain-induced MI transition in n-Si and n-Ge: Physical mechanisms and transport phenomena, PHYS ST S-B, 223(2), 2001, pp. 519-523
Authors:
Budzulyak, SI
Venger, EF
Dotsenko, YP
Ermakov, VN
Kolomoets, VV
Machulin, VF
Panasyuk, LI
Citation: Si. Budzulyak et al., Breakdown of shallow-level donors in Si and Ge on the insulating side of astrain-induced metal-insulator transition, SEMICONDUCT, 34(9), 2000, pp. 1021-1023
Authors:
Budzulyak, SI
Dotsenko, JP
Gorin, AE
Kolomoets, VV
Machulin, VF
Ermakov, VN
Venger, EF
Liarokapis, E
Tunstall, DP
Citation: Si. Budzulyak et al., Breakdown of donor localized states on the insulating side of strain-induced MI transitions in Si and Ge, PHYS ST S-B, 211(1), 1999, pp. 137-142