AAAAAA

   
Results: 1-11 |
Results: 11
Measurement and simulation of temperature dynamics under electron beam
Authors: Babin, S Gaevski, ME Konnikov, SG
Citation: S. Babin et al., Measurement and simulation of temperature dynamics under electron beam, J VAC SCI B, 19(1), 2001, pp. 153-157
Time-resolved capacitance spectroscopy of hole and electron levels in InAs/GaAs quantum dots
Authors: Kapteyn, CMA Lion, M Heitz, R Bimberg, D Brunkov, P Volovik, B Konnikov, SG Kovsh, AR Ustinov, VM
Citation: Cma. Kapteyn et al., Time-resolved capacitance spectroscopy of hole and electron levels in InAs/GaAs quantum dots, PHYS ST S-B, 224(1), 2001, pp. 57-60
Accumulation of majority charge carriers in GaAs layers containing arsenicnanoclusters
Authors: Brunkov, PN Chaldyshev, VV Chernigovskii, AV Suvorova, AA Bert, NA Konnikov, SG Preobrazhenskii, VV Putyato, MA Semyagin, BR
Citation: Pn. Brunkov et al., Accumulation of majority charge carriers in GaAs layers containing arsenicnanoclusters, SEMICONDUCT, 34(9), 2000, pp. 1068-1072
Two-dimensional photonic crystal fabrication using fullerene films
Authors: Gaevski, ME Kognovitskii, SO Konnikov, SG Nashchekin, AV Nesterov, SI Seisyan, RP Zadiranov, JM
Citation: Me. Gaevski et al., Two-dimensional photonic crystal fabrication using fullerene films, NANOTECHNOL, 11(4), 2000, pp. 270-273
Study of thin films of high temperature superconductors based on YBaCuO byEPMA
Authors: Tretyakov, VV Kazakov, SV Bobyl, AV Konnikov, SG
Citation: Vv. Tretyakov et al., Study of thin films of high temperature superconductors based on YBaCuO byEPMA, MIKROCH ACT, 132(2-4), 2000, pp. 365-375
Hole and electron emission from InAs quantum dots
Authors: Kapteyn, CMA Lion, M Heitz, R Bimberg, D Brunkov, PN Volovik, BV Konnikov, SG Kovsh, AR Ustinov, VM
Citation: Cma. Kapteyn et al., Hole and electron emission from InAs quantum dots, APPL PHYS L, 76(12), 2000, pp. 1573-1575
Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence
Authors: Usikov, AS Tret'yakov, VV Lundin, VV Zadiranov, YM Pushnyi, BV Konnikov, SG
Citation: As. Usikov et al., Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence, TECH PHYS L, 25(4), 1999, pp. 253-256
Unstrained epitaxial InxGa1-xAs films obtained on porous GaAs
Authors: Soldatenkov, FY Ulin, VP Yakovenko, AA Fedorova, OM Konnikov, SG Korol'kov, VI
Citation: Fy. Soldatenkov et al., Unstrained epitaxial InxGa1-xAs films obtained on porous GaAs, TECH PHYS L, 25(11), 1999, pp. 852-854
Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates
Authors: Mamutin, VV Ulin, VP Tret'yakov, VV Ivanov, SV Konnikov, SG Kop'ev, PS
Citation: Vv. Mamutin et al., Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates, TECH PHYS L, 25(1), 1999, pp. 1-3
Electron and hole levels of InAs quantum dots in a GaAs matrix
Authors: Henini, M Brounkov, PN Polimeni, A Stoddart, ST Main, PC Eaves, L Kovsh, AR Musikhin, YG Konnikov, SG
Citation: M. Henini et al., Electron and hole levels of InAs quantum dots in a GaAs matrix, SUPERLATT M, 25(1-2), 1999, pp. 105-111
Emission of electrons from the ground and first excited states of self-organized InAs GaAs quantum dot structures
Authors: Brunkov, PN Kovsh, AR Ustinov, VM Musikhin, YG Ledentsov, NN Konnikov, SG Polimeni, A Patane, A Main, PC Eaves, L Kapteyn, CMA
Citation: Pn. Brunkov et al., Emission of electrons from the ground and first excited states of self-organized InAs GaAs quantum dot structures, J ELEC MAT, 28(5), 1999, pp. 486-490
Risultati: 1-11 |