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Results: 1-9 |
Results: 9
Optical characterization of CdZnTe/ZnTe heterostructures modified by electron or X-ray irradiation
Authors: Venger, YF Semenova, GN Korsunskaya, NE Semtsiv, MP Borkovskaya, LV Sharibaev, M Braylovsky, YY Sadofyev, YG
Citation: Yf. Venger et al., Optical characterization of CdZnTe/ZnTe heterostructures modified by electron or X-ray irradiation, MAT SCI E B, 80(1-3), 2001, pp. 193-196
The role of oxidation on porous silicon photoluminescence and its excitation
Authors: Torchinskaya, TV Korsunskaya, NE Khomenkova, LY Dhumaev, BR Prokes, SM
Citation: Tv. Torchinskaya et al., The role of oxidation on porous silicon photoluminescence and its excitation, THIN SOL FI, 381(1), 2001, pp. 88-93
Features of the long-term photo EMF relaxation in a heteroepitaxial ZnSe-GaAs structure
Authors: Shekhovtsov, LV Venger, EF Semenova, GN Sadof'ev, YG Korsunskaya, NE Semtsiv, MP Sapko, SY
Citation: Lv. Shekhovtsov et al., Features of the long-term photo EMF relaxation in a heteroepitaxial ZnSe-GaAs structure, TECH PHYS L, 26(3), 2000, pp. 190-192
Emission associated with extended defects in epitaxial ZnTe/GaAs layers and multilayer structures
Authors: Venger, EF Sadof'ev, YG Semenova, GN Korsunskaya, NE Klad'ko, VP Semtsiv, MP Borkovskaya, LV
Citation: Ef. Venger et al., Emission associated with extended defects in epitaxial ZnTe/GaAs layers and multilayer structures, SEMICONDUCT, 34(1), 2000, pp. 11-16
Complex nature of the red photoluminescence band and peculiarities of its excitation in porous silicon
Authors: Torchynska, TV Gomez, JP Polupan, GP Espinoza, FGB Borquez, AG Korsunskaya, NE Khomenkova, LY
Citation: Tv. Torchynska et al., Complex nature of the red photoluminescence band and peculiarities of its excitation in porous silicon, APPL SURF S, 167(3-4), 2000, pp. 197-204
Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous silicon
Authors: Korsunskaya, NE Kaganovich, EB Khomenkova, LY Bulakh, BM Dzhumaev, BR Beketov, GV Manoilov, EG
Citation: Ne. Korsunskaya et al., Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous silicon, APPL SURF S, 166(1-4), 2000, pp. 349-353
Suboxide-related centre as the source of the intense red luminescence of porous Si
Authors: Korsunskaya, NE Torchinskaya, TV Khomenkova, LY Dzhumaev, BR Prokes, SM
Citation: Ne. Korsunskaya et al., Suboxide-related centre as the source of the intense red luminescence of porous Si, MICROEL ENG, 51-2, 2000, pp. 485-493
Lateral and depth inhomogeneities in Zn-based heterostructures grown on GaAs by MBE
Authors: Venger, EF Sadof'ev, YG Semenova, GN Korsunskaya, NE Klad'ko, VP Shechovtsov, LV Semtsiv, MP Borkovskaya, LV Sapko, SY
Citation: Ef. Venger et al., Lateral and depth inhomogeneities in Zn-based heterostructures grown on GaAs by MBE, THIN SOL FI, 367(1-2), 2000, pp. 184-188
OH-related emitting centers in interface layer of porous silicon
Authors: Torchynska, TV Sheinkman, MK Korsunskaya, NE Khomenkovan, LY Bulakh, BM Dzhumaev, BR Many, A Goldstein, Y Savir, E
Citation: Tv. Torchynska et al., OH-related emitting centers in interface layer of porous silicon, PHYSICA B, 274, 1999, pp. 955-958
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