Citation: La. Kosyachenko et al., Special features of generation-recombination processes in the p-n junctions based on HgMnTe, SEMICONDUCT, 34(6), 2000, pp. 668-670
Authors:
Kosyachenko, LA
Rarenko, IM
Sun, WG
Lu, ZX
Citation: La. Kosyachenko et al., Charge transport mechanisms in HgMnTe photodiodes with ion etched p-n junctions, SOL ST ELEC, 44(7), 2000, pp. 1197-1202