Authors:
Diagne, M
He, Y
Zhou, H
Makarona, E
Nurmikko, AV
Han, J
Waldrip, KE
Figiel, JJ
Takeuchi, T
Krames, M
Citation: M. Diagne et al., Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction, APPL PHYS L, 79(22), 2001, pp. 3720-3722
Authors:
Boroditsky, M
Gontijo, I
Jackson, M
Vrijen, R
Yablonovitch, E
Krauss, T
Cheng, CC
Scherer, A
Bhat, R
Krames, M
Citation: M. Boroditsky et al., Surface recombination measurements on III-V candidate materials for nanostructure light-emitting diodes, J APPL PHYS, 87(7), 2000, pp. 3497-3504