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Results: 1-25/27
Authors:
Krier, A
Citation: A. Krier, Physics and technology of mid-infrared light emitting diodes, PHI T ROY A, 359(1780), 2001, pp. 599-618
Authors:
Simecek, T
Krier, A
Phillips, C
Krier, A
Citation: T. Simecek et al., Physics and technology of mid-infrared light emitting diodes - Discussion, PHI T ROY A, 359(1780), 2001, pp. 619-619
Authors:
Zhang, QS
Liu, FQ
Zhang, YZ
Wang, ZG
Gao, HH
Krier, A
Citation: Qs. Zhang et al., Investigation on InGaAs/InAlAs quantum cascade lasers, J INF M W, 20(1), 2001, pp. 41-43
Authors:
Krier, A
Huang, XL
Hammiche, A
Citation: A. Krier et al., Liquid phase epitaxial growth and morphology of InSb quantum dots, J PHYS D, 34(6), 2001, pp. 874-878
Authors:
Krier, A
Sherstnev, VV
Citation: A. Krier et Vv. Sherstnev, LEDs for formaldehyde detection at 3.6 mu m, J PHYS D, 34(3), 2001, pp. 428-432
Authors:
Moiseev, KD
Krier, A
Yakovlev, YP
Citation: Kd. Moiseev et al., Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures, J APPL PHYS, 90(8), 2001, pp. 3988-3992
Authors:
Krier, A
Gao, HH
Sherstnev, VV
Citation: A. Krier et al., Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs, IEE P-OPTO, 147(3), 2000, pp. 217-221
Authors:
Krier, A
Labadi, Z
Citation: A. Krier et Z. Labadi, Modelling of InAs thin layer growth from the liquid phase, IEE P-OPTO, 147(3), 2000, pp. 222-224
Authors:
Krier, A
Krier, SE
Labadi, Z
Citation: A. Krier et al., Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy, APPL PHYS A, 71(3), 2000, pp. 249-253
Authors:
Arivuoli, D
Lawson, NS
Krier, A
Attolini, G
Pelosi, C
Citation: D. Arivuoli et al., Nanoindentation studies of MOVPE grown GaAs/InP heterostructures, MATER CH PH, 66(2-3), 2000, pp. 207-212
Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy
Authors:
Krier, A
Sherstnev, VV
Labadi, Z
Kreier, SE
Gao, HH
Citation: A. Krier et al., Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy, J PHYS D, 33(24), 2000, pp. 3156-3160
Authors:
Krier, A
Sherstnev, VV
Citation: A. Krier et Vv. Sherstnev, Powerful interface light emitting diodes for methane gas detection, J PHYS D, 33(2), 2000, pp. 101-106
Authors:
Krier, A
Sherstnev, VV
Gao, HH
Citation: A. Krier et al., A novel LED module for the detection of H2S at 3.8 mu m, J PHYS D, 33(14), 2000, pp. 1656-1661
Authors:
Gao, HH
Krier, A
Sherstnev, VV
Citation: Hh. Gao et al., Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m, APPL PHYS L, 77(6), 2000, pp. 872-874
Authors:
Sherstnev, VV
Monahov, AM
Krier, A
Hill, G
Citation: Vv. Sherstnev et al., Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection, APPL PHYS L, 77(24), 2000, pp. 3908-3910
Authors:
Krier, A
Huang, XL
Hammiche, A
Citation: A. Krier et al., Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phaseepitaxy, APPL PHYS L, 77(23), 2000, pp. 3791-3793
Authors:
Braus, DF
Ende, G
Weber-Fahr, W
Sartorius, A
Krier, A
Hubrich-Ungureanu, P
Ruf, M
Stuck, S
Henn, FA
Citation: Df. Braus et al., Antipsychotic drug effects on motor activation measured by functional magnetic resonance imaging in schizophrenic patients, SCHIZOPHR R, 39(1), 1999, pp. 19-29
Authors:
Iraqi, A
Clark, D
Jones, R
Krier, A
Citation: A. Iraqi et al., Synthesis, characterisation and study of photoluminescent properties of head to tail poly(3-pentoxythiophene), poly(3-cyclohexylthiophene) and mixed alkoxy cyclohexyl 3-substituted polythiophenes, SYNTH METAL, 102(1-3), 1999, pp. 1220-1221
Authors:
Gao, HH
Krier, A
Sherstnev, VV
Citation: Hh. Gao et al., High quality InAs grown by liquid phase epitaxy using gadolinium gettering, SEMIC SCI T, 14(5), 1999, pp. 441-445
Authors:
Jones, R
Krier, A
Davidson, K
Schmit, JPN
Zawadzka, J
Citation: R. Jones et al., Conductivity mechanisms in poly(p-phenylene vinylene) light-emitting diodes at high and low bias, THIN SOL FI, 340(1-2), 1999, pp. 221-229
Authors:
Krier, A
Gao, HH
Sherstnev, VV
Yakovlev, Y
Citation: A. Krier et al., High power 4.6 mu m light emitting diodes for CO detection, J PHYS D, 32(24), 1999, pp. 3117-3121
Authors:
Krier, A
Labadi, Z
Hammiche, A
Citation: A. Krier et al., InAsSbP quantum dots grown by liquid phase epitaxy, J PHYS D, 32(20), 1999, pp. 2587-2589
Authors:
Gao, HH
Krier, A
Sherstnev, V
Yakovlev, Y
Citation: Hh. Gao et al., InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature, J PHYS D, 32(15), 1999, pp. 1768-1772
Authors:
Krier, A
Gao, HH
Sherstnev, VV
Citation: A. Krier et al., Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering, J APPL PHYS, 85(12), 1999, pp. 8419-8422
Authors:
Krier, A
Gao, H
Sherstnev, V
Yakovlev, Y
Citation: A. Krier et al., High power 4.6 mu m LEDs for CO detection grown by LPE, ELECTR LETT, 35(19), 1999, pp. 1665-1667