Authors: Krivolapchuk, VV Moskalenko, ES Zhmodikov, AL

Citation: Vv. Krivolapchuk et al., Specific features of the indirect exciton luminescence line in GaAs/AlxGa1-xAs double quantum wells - art. no. 045313, PHYS REV B, 6404(4), 2001, pp. 5313

Authors: Moskalenko, ES Krivolapchuk, VV Zhmodikov, AL

Citation: Es. Moskalenko et al., Giant burst of the emission line intensity of spatially indirect excitons in GaAs/AlGaAs double quantum wells, PHYS SOL ST, 42(8), 2000, pp. 1535-1541

Authors: Krivolapchuk, VV Moskalenko, ES Zhmodikov, AL

Citation: Vv. Krivolapchuk et al., A giant shot of radiation intensity as eventual evidence of Bose-Einstein condensation of excitons in double quantum wells in GaBs/AlGaAs, NANOTECHNOL, 11(4), 2000, pp. 246-251

Authors: Krivolapchuk, VV Moskalenko, ES Zhmodikov, AL Cheng, TS Foxon, CT

Citation: Vv. Krivolapchuk et al., Manifestation of collective properties of spatially indirect excitons in GaAs/AlGaAs asymmetric double quantum wells, PHYS SOL ST, 41(2), 1999, pp. 291-295

Authors: Zhilyaev, YV Krivolapchuk, VV Safronov, IN

Citation: Yv. Zhilyaev et al., Study of the polarization photoluminescence of thick epitaxial GaN layers, SEMICONDUCT, 33(7), 1999, pp. 716-718

Authors: Krivolapchuk, VV Moskalenko, ES Zhmodikov, AL Cheng, TS Foxon, CT

Citation: Vv. Krivolapchuk et al., Collective properties of spatially indirect excitons in asymmetric GaAs AlGaAs double quantum wells, SOL ST COMM, 111(1), 1999, pp. 49-54