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Results: 1-25/31
Authors:
Witte, H
Krtschil, A
Lisker, M
Krost, A
Christen, J
Kuhn, B
Scholz, F
Citation: H. Witte et al., Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE, MAT SCI E B, 82(1-3), 2001, pp. 85-87
Authors:
Krtschil, A
Kielburg, A
Witte, H
Krost, A
Christen, J
Wenzel, A
Rauschenbach, B
Citation: A. Krtschil et al., Implantation induced defect states in gallium nitride and their annealing behaviour, PHYS ST S-B, 228(1), 2001, pp. 325-329
Authors:
Strittmatter, A
Rodt, S
Reissmann, L
Bimberg, D
Schroder, H
Obermeier, E
Riemann, T
Christen, J
Krost, A
Citation: A. Strittmatter et al., Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates, APPL PHYS L, 78(6), 2001, pp. 727-729
Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation
Authors:
Zhang, W
Roesel, S
Alves, HR
Meister, D
Kriegseis, W
Hofmann, DM
Meyer, BK
Riemann, T
Veit, P
Blaesing, J
Krost, A
Christen, J
Citation: W. Zhang et al., Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation, APPL PHYS L, 78(6), 2001, pp. 772-774
Authors:
Dadgar, A
Christen, J
Riemann, T
Richter, S
Blasing, J
Diez, A
Krost, A
Alam, A
Heuken, M
Citation: A. Dadgar et al., Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer, APPL PHYS L, 78(15), 2001, pp. 2211-2213
Authors:
Dadgar, A
Blasing, J
Diez, A
Alam, A
Heuken, M
Krost, A
Citation: A. Dadgar et al., Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1 mu m in thickness, JPN J A P 2, 39(11B), 2000, pp. L1183-L1185
Authors:
Witte, H
Krtschil, A
Lisker, M
Rudloff, D
Christen, J
Krost, A
Stutzmann, M
Scholz, F
Citation: H. Witte et al., Fermi level pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy, MRS I J N S, 5, 2000, pp. NIL_804-NIL_809
Authors:
Grundmann, M
Krost, A
Citation: M. Grundmann et A. Krost, Atomic structure based simulation of X-ray scattering front strained superlattices, PHYS ST S-B, 218(2), 2000, pp. 417-423
Authors:
Hunger, R
Su, D
Krost, A
Ellmer, D
Lewerenz, HJ
Scheer, R
Citation: R. Hunger et al., Structure of extended defects in epitaxial CuInS2/Si(111), THIN SOL FI, 361, 2000, pp. 437-442
Authors:
Krost, A
Blasing, J
Schulze, F
Schon, O
Alam, A
Heuken, M
Citation: A. Krost et al., Nearly strain-free AlGaN on (0001) sapphire: X-ray measurements and a new crystallographic growth model, J CRYST GR, 221, 2000, pp. 251-257
Authors:
Strittmatter, A
Bimberg, D
Krost, A
Blasing, J
Veit, P
Citation: A. Strittmatter et al., Structural investigation of GaN layers grown on Si(111) substrates using anitridated AlAs buffer layer, J CRYST GR, 221, 2000, pp. 293-296
Authors:
Krtschil, A
Witte, H
Lisker, M
Christen, J
Krost, A
Birkle, U
Einfeldt, S
Hommel, D
Scholz, F
Off, J
Stutzmann, M
Citation: A. Krtschil et al., Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy, APPL PHYS L, 77(4), 2000, pp. 546-548
Authors:
Krost, A
Blasing, J
Protzmann, H
Lunenburger, M
Heuken, M
Citation: A. Krost et al., Indium nanowires in thick (InGaN) layers as determined by x-ray analysis, APPL PHYS L, 76(11), 2000, pp. 1395-1397
Authors:
Spithoven, JL
Lorbacher, J
Manke, I
Heinrichsdorff, F
Krost, A
Bimberg, D
Dahne-Prietsch, M
Citation: Jl. Spithoven et al., Finite linewidth observed in photoluminescence spectra of individual In0.4Ga0.6As quantum dots, J VAC SCI B, 17(4), 1999, pp. 1632-1638
Authors:
Flebbe, O
Eisele, H
Kalka, T
Heinrichsdorff, F
Krost, A
Bimberg, D
Dahne-Prietsch, M
Citation: O. Flebbe et al., Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition, J VAC SCI B, 17(4), 1999, pp. 1639-1648
Authors:
Strittmatter, A
Krost, A
Turck, V
Strassburg, M
Bimberg, D
Blasing, J
Hempel, T
Christen, J
Neubauer, B
Gerthsen, D
Christmann, T
Meyer, BK
Citation: A. Strittmatter et al., LP-MOCVD growth of GaN on silicon substrates - comparison between AlAs andZnO nucleation layers, MAT SCI E B, 59(1-3), 1999, pp. 29-32
Authors:
Riemann, T
Rudloff, D
Christen, J
Krost, A
Lunenburger, M
Protzmann, H
Heuken, M
Citation: T. Riemann et al., Band filling and energy relaxation in InGaN/GaN-multiple quantum well structures, PHYS ST S-B, 216(1), 1999, pp. 301-305
Authors:
Rudloff, D
Blasing, J
Riemann, T
Christen, J
Krost, A
Lunenburger, M
Protzmann, H
Heuken, M
Citation: D. Rudloff et al., Structural and optical analysis of (In,Ga)N structures grown by MOCVD, PHYS ST S-B, 216(1), 1999, pp. 315-320
Authors:
Krtschil, A
Witte, H
Lisker, M
Christen, J
Krost, A
Birkle, U
Einfeldt, S
Hommel, D
Wenzel, A
Rauschenbach, B
Citation: A. Krtschil et al., Incorporation of deep defects in GaN induced by doping and implantation processes, PHYS ST S-B, 216(1), 1999, pp. 587-591
Authors:
Lisker, M
Krtschil, A
Witte, H
Christen, J
Krost, A
Birkle, U
Einfeldt, S
Hommel, D
Citation: M. Lisker et al., Influence of carbon doping on the photoconductivity in GaN layers, PHYS ST S-B, 216(1), 1999, pp. 593-597
Authors:
Reich, S
Goni, AR
Thomsen, C
Heinrichsdorff, F
Krost, A
Bimberg, D
Citation: S. Reich et al., Raman scattering by optical phonons in a highly strained InAs/GaAs monolayer, PHYS ST S-B, 215(1), 1999, pp. 419-424
Authors:
Eisele, H
Flebbe, O
Kalka, T
Heinrichsdorff, F
Krost, A
Bimberg, D
Dahne-Prietsch, M
Citation: H. Eisele et al., The stoichiometry of InAs quantum dots determined by cross-sectional scanning tunneling microscopy, PHYS ST S-B, 215(1), 1999, pp. 865-868
Authors:
Krost, A
Heinrichsdorff, F
Bimberg, D
Blasing, J
Darhuber, A
Bauer, G
Citation: A. Krost et al., X-ray analysis of self-organized InAs/InGaAs quantum dot structure, CRYST RES T, 34(1), 1999, pp. 89-102
Authors:
Strittmatter, A
Krost, A
Blasing, J
Bimberg, D
Citation: A. Strittmatter et al., High quality GaN layers grown by metalorganic chemical vapor deposition onSi(111) substrates, PHYS ST S-A, 176(1), 1999, pp. 611-614
Authors:
Protzmann, H
Lunenburger, M
Blasing, J
Krost, A
Heuken, M
Jurgensen, H
Citation: H. Protzmann et al., Interface treatment of GaN/InGaN-multi quantum well structures grown in production type MOVPE systems, PHYS ST S-A, 176(1), 1999, pp. 649-654