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Results: 1-7 |
Results: 7
Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots
Authors: Joyce, PB Krzyzewski, TJ Steans, PH Bell, GR Neave, JH Jones, TS
Citation: Pb. Joyce et al., Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots, SURF SCI, 492(3), 2001, pp. 345-353
Surface morphology and reconstruction changes during heteroepitaxial growth of InAs on GaAS(001)-(2 x 4)
Authors: Krzyzewski, TJ Joyce, PB Bell, GR Jones, TS
Citation: Tj. Krzyzewski et al., Surface morphology and reconstruction changes during heteroepitaxial growth of InAs on GaAS(001)-(2 x 4), SURF SCI, 482, 2001, pp. 891-897
Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy
Authors: Joyce, PB Krzyzewski, TJ Bell, GR Jones, TS Malik, S Childs, D Murray, R
Citation: Pb. Joyce et al., Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 1000-1004
Surface morphology evolution during the overgrowth of large InAs-GaAs quantum dots
Authors: Joyce, PB Krzyzewski, TJ Bell, GR Jones, TS
Citation: Pb. Joyce et al., Surface morphology evolution during the overgrowth of large InAs-GaAs quantum dots, APPL PHYS L, 79(22), 2001, pp. 3615-3617
Island size scaling for submonolayer growth of InAs on GaAs(001)-(2X4): Strain and surface reconstruction effects
Authors: Bell, GR Krzyzewski, TJ Joyce, PB Jones, TS
Citation: Gr. Bell et al., Island size scaling for submonolayer growth of InAs on GaAs(001)-(2X4): Strain and surface reconstruction effects, PHYS REV B, 61(16), 2000, pp. 10551-10554
Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy
Authors: Joyce, PB Krzyzewski, TJ Bell, GR Jones, TS Malik, S Childs, D Murray, R
Citation: Pb. Joyce et al., Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy, PHYS REV B, 62(16), 2000, pp. 10891-10895
Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying
Authors: Joyce, PB Krzyzewski, TJ Bell, GR Joyce, BA Jones, TS
Citation: Pb. Joyce et al., Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying, PHYS REV B, 58(24), 1998, pp. R15981-R15984
Risultati: 1-7 |