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Results: 1-12 |
Results: 12
X-ray and luminescence analysis of finely dispersed beta-FeSi2 films formed on Si by pulsed ion treatment
Authors: Bayazitov, RM Batalov, RI Terukov, EI Kudoyarova, VK
Citation: Rm. Bayazitov et al., X-ray and luminescence analysis of finely dispersed beta-FeSi2 films formed on Si by pulsed ion treatment, PHYS SOL ST, 43(9), 2001, pp. 1633-1636
A pulsed synthesis of beta-FeSi2 layers on silicon implanted with Fe+ ions
Authors: Batalov, RI Bayazitov, RM Terukov, EI Kudoyarova, VK Weiser, G Kuehne, H
Citation: Ri. Batalov et al., A pulsed synthesis of beta-FeSi2 layers on silicon implanted with Fe+ ions, SEMICONDUCT, 35(11), 2001, pp. 1263-1269
Photoluminescence of ytterbium doped amorphous silicon and silicon carbide
Authors: Terukov, EI Kudoyarova, VK Kuznetsov, AN Koughia, KV Weiser, G Kuehne, H
Citation: Ei. Terukov et al., Photoluminescence of ytterbium doped amorphous silicon and silicon carbide, MAT SCI E B, 81(1-3), 2001, pp. 161-163
Correlation between photoluminescence efficiency and density of paramagnetic defects in Er-doped hydrogenated amorphous silicon
Authors: Konstantinova, EA Kamenev, BV Kashkarov, PK Timoshenko, VY Kudoyarova, VK Terukov, EI
Citation: Ea. Konstantinova et al., Correlation between photoluminescence efficiency and density of paramagnetic defects in Er-doped hydrogenated amorphous silicon, J NON-CRYST, 282(2-3), 2001, pp. 321-324
The influence of erbium on electrical and photoelectric properties of amorphous silicon produced by radio-frequency silane decomposition
Authors: Terukov, EI Kazanin, MM Kon'kov, OI Kudoyarova, VK Kougiya, KV Nikulin, YA Kazanskii, AG
Citation: Ei. Terukov et al., The influence of erbium on electrical and photoelectric properties of amorphous silicon produced by radio-frequency silane decomposition, SEMICONDUCT, 34(7), 2000, pp. 829-834
Modifications of the structure and electrical parameters of the films of amorphous hydrogenated silicon implanted with Si+ ions
Authors: Golikova, OA Kuznetsov, AN Kudoyarova, VK Petrov, IN Domashevskaya, EP Terekhov, VA
Citation: Oa. Golikova et al., Modifications of the structure and electrical parameters of the films of amorphous hydrogenated silicon implanted with Si+ ions, SEMICONDUCT, 34(1), 2000, pp. 87-91
The influence of local surroundings of Er atoms on the kinetics of decay of Er photoluminescence in amorphous hydrogenated silicon
Authors: Terukov, EI Kudoyarova, VK Kon'kov, OI Konstantinova, EA Kamenev, BV Timoshenko, VY
Citation: Ei. Terukov et al., The influence of local surroundings of Er atoms on the kinetics of decay of Er photoluminescence in amorphous hydrogenated silicon, SEMICONDUCT, 34(1), 2000, pp. 92-94
The influence of deposition parameters on the structure of nanocrystallinesilicon
Authors: Terukov, EI Kudoyarova, VK Davydov, VY Koughia, KV Weiser, G Mell, H
Citation: Ei. Terukov et al., The influence of deposition parameters on the structure of nanocrystallinesilicon, MAT SCI E B, 69, 2000, pp. 266-271
Erbium incorporation in plasma-deposited amorphous silicon
Authors: Terukov, EI Konkov, OI Kudoyarova, VK Koughia, KV Weiser, G Kuhne, H Kleider, JP Longeaud, C Bruggemann, R
Citation: Ei. Terukov et al., Erbium incorporation in plasma-deposited amorphous silicon, J NON-CRYST, 266, 2000, pp. 614-618
Influence of the substrate temperature and annealing on the 1.54-mu m erbium photoluminescence of a-Si : H films obtained using a glow discharge
Authors: Terukov, EI Kon'kov, OI Kudoyarova, VK Gusev, OB Weiser, G Kuehne, H
Citation: Ei. Terukov et al., Influence of the substrate temperature and annealing on the 1.54-mu m erbium photoluminescence of a-Si : H films obtained using a glow discharge, SEMICONDUCT, 33(2), 1999, pp. 177-179
Resonant nonradiative energy transfer to erbium ions in amorphous hydrogenated silicon
Authors: Kuhne, H Weiser, G Terukov, EI Kusnetsov, AN Kudoyarova, VK
Citation: H. Kuhne et al., Resonant nonradiative energy transfer to erbium ions in amorphous hydrogenated silicon, J APPL PHYS, 86(2), 1999, pp. 896-901
Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 mu m) in erbium-doped a-Si : H films
Authors: Kudoyarova, VK Kuznetsov, AN Terukov, EI Gusev, OB Kudryavtsev, YA Ber, BY Gusinskii, GM Fuhs, W Weiser, G Kuehne, H
Citation: Vk. Kudoyarova et al., Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 mu m) in erbium-doped a-Si : H films, SEMICONDUCT, 32(11), 1998, pp. 1234-1238
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