Authors: Tabe, M Kumezawa, M Ishikawa, Y

Citation: M. Tabe et al., Quantum-confinement effect in ultrathin Si layer of silicon-on-insulator substrate, JPN J A P 2, 40(2B), 2001, pp. L131-L133

Authors: Tabe, M Kumezawa, M Ishikawa, Y Mizuno, T

Citation: M. Tabe et al., Quantum confinement effects in Si quantum well and dot structures fabricated from ultrathin Silicon-on-insulator wafers, APPL SURF S, 175, 2001, pp. 613-618

Authors: Ishikawa, Y Kosugi, M Kumezawa, M Tsuchiya, T Tabe, M

Citation: Y. Ishikawa et al., Capacitance-voltage study of single-crystalline Si dots on ultrathin buried SiO2 formed by nanometer-scale local oxidation, THIN SOL FI, 369(1-2), 2000, pp. 69-72

Authors: Tabe, M Kumezawa, M Yamamoto, T Makita, S Yamaguchi, T Ishikawa, Y

Citation: M. Tabe et al., Formation of high-density silicon dots on a silicon-on-insulator substrate, APPL SURF S, 142(1-4), 1999, pp. 553-557