Authors:
Hacke, P
Domen, K
Kuramata, A
Tanahashi, T
Ueda, O
Citation: P. Hacke et al., Origin of the nonradiative < 11(2)over-bar0 > line defect in lateral epitaxy-grown GaN on SiC substrates, APPL PHYS L, 76(18), 2000, pp. 2547-2549
Authors:
Kuramata, A
Kubota, S
Soejima, R
Domen, K
Horino, K
Hacke, P
Tanahashi, T
Citation: A. Kuramata et al., Continuous wave operation at room temperature of InGaN laser diodes fabricated on 4H-SiC substrates, JPN J A P 2, 38(5A), 1999, pp. L481-L483
Authors:
Hacke, P
Kuramata, A
Domen, K
Horino, K
Tanahashi, T
Citation: P. Hacke et al., Photoluminescence intensity and spectral distribution of GaN films on SiC substrates - The dependence on dislocation density and structure, PHYS ST S-B, 216(1), 1999, pp. 639-644
Authors:
Ramvall, P
Aoyagi, Y
Kuramata, A
Hacke, P
Horino, K
Citation: P. Ramvall et al., Influence of a piezoelectric field on the electron distribution in a double GaN/Al0.14Ga0.86N heterojunction, APPL PHYS L, 74(25), 1999, pp. 3866-3868
Authors:
Kuramata, A
Kubota, S
Soejima, R
Domen, K
Horino, K
Tanahashi, T
Citation: A. Kuramata et al., Room-temperature continuous wave operation of InGaN laser diodes with vertical conducting structure on S1C substrate, JPN J A P 2, 37(11B), 1998, pp. L1373-L1375
Citation: A. Kuramata et al., GaN-based blue laser diodes grown on SiC substrate as light source of high-density optical data storage, FUJITSU SCI, 34(2), 1998, pp. 191-203