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Results: 1-25 |
Results: 25
Dopant redistribution and formation of electrically active complexes in SiGe
Authors: Kuznetsov, AY Christensen, JS Monakhov, EV Lindgren, AC Radamson, HH Nylandsted-Larsen, A Svensson, BG
Citation: Ay. Kuznetsov et al., Dopant redistribution and formation of electrically active complexes in SiGe, MAT SC S PR, 4(1-3), 2001, pp. 217-223
Influence of boron concentration on the enhanced diffusion observed after irradiation of boron delta-doped silicon at 570 degrees C
Authors: Leveque, P Christensen, JS Kuznetsov, AY Svensson, BG Larsen, AN
Citation: P. Leveque et al., Influence of boron concentration on the enhanced diffusion observed after irradiation of boron delta-doped silicon at 570 degrees C, NUCL INST B, 178, 2001, pp. 337-341
Vacancy-related deep levels in n-type Si1-xGex strained layers - art. no. 245322
Authors: Monakhov, EV Kuznetsov, AY Svensson, BG
Citation: Ev. Monakhov et al., Vacancy-related deep levels in n-type Si1-xGex strained layers - art. no. 245322, PHYS REV B, 6324(24), 2001, pp. 5322
Irradiation enhanced diffusion of boron in delta-doped silicon
Authors: Leveque, P Kuznetsov, AY Christensen, JS Svensson, BG Larsen, AN
Citation: P. Leveque et al., Irradiation enhanced diffusion of boron in delta-doped silicon, J APPL PHYS, 89(10), 2001, pp. 5400-5405
Self-interstitial migration during ion irradiation of boron delta-doped silicon
Authors: Kuznetsov, AY Leveque, P Hallen, A Svensson, BG Larsen, AN
Citation: Ay. Kuznetsov et al., Self-interstitial migration during ion irradiation of boron delta-doped silicon, MAT SC S PR, 3(4), 2000, pp. 279-283
Thermal donor and antimony energy levels in relaxed Si1-xGex layers
Authors: Monakhov, EV Kuznetsov, AY Svensson, BG Larsen, AN
Citation: Ev. Monakhov et al., Thermal donor and antimony energy levels in relaxed Si1-xGex layers, PHYS REV B, 61(3), 2000, pp. 1708-1711
Reaction of palladium iodide with organic amides in acetonitrile and acetone
Authors: Buchikhin, EP Chekmarev, AM Kuznetsov, AY
Citation: Ep. Buchikhin et al., Reaction of palladium iodide with organic amides in acetonitrile and acetone, RUSS J G CH, 70(1), 2000, pp. 1-3
Frozen structural disorder in a pseudospin model with barriers
Authors: Kovarskii, VP Kuznetsov, AY Khristov, AV
Citation: Vp. Kovarskii et al., Frozen structural disorder in a pseudospin model with barriers, LOW TEMP PH, 26(5), 2000, pp. 348-353
Enthalpies of formation of the ions present in the saturated vapor over cesium chloride
Authors: Pogrebnoi, AM Kudin, LS Kuznetsov, AY
Citation: Am. Pogrebnoi et al., Enthalpies of formation of the ions present in the saturated vapor over cesium chloride, RUSS J PH C, 74(10), 2000, pp. 1728-1730
Criteria of parameter selection for quantum chemical simulation of the electronic structure of rare-earth ions by the scattered wave cluster method
Authors: Kuznetsov, AY Sobolev, AB Korol, YL
Citation: Ay. Kuznetsov et al., Criteria of parameter selection for quantum chemical simulation of the electronic structure of rare-earth ions by the scattered wave cluster method, J STRUCT CH, 41(3), 2000, pp. 362-367
Comparative study of divacancy and E-center electronic levels in Si and strained Si0.87Ge0.13 layers
Authors: Monakhov, EV Kuznetsov, AY Svensson, BG
Citation: Ev. Monakhov et al., Comparative study of divacancy and E-center electronic levels in Si and strained Si0.87Ge0.13 layers, J APPL PHYS, 87(9), 2000, pp. 4629-4631
Reaction of metallic palladium with iodine in dimethylformamide
Authors: Buchikhin, EP Kuznetsov, AY Chekmarev, AM Lavrent'ev, IP
Citation: Ep. Buchikhin et al., Reaction of metallic palladium with iodine in dimethylformamide, RUSS J C CH, 25(6), 1999, pp. 416-417
Electronic structure of lithium tetraborate Li2B4O7 crystals. Cluster calculations and x-ray photoelectron spectroscopy
Authors: Kuznetsov, AY Kruzhalov, AV Ogorodnikov, IN Sobolev, AB Isaenko, LI
Citation: Ay. Kuznetsov et al., Electronic structure of lithium tetraborate Li2B4O7 crystals. Cluster calculations and x-ray photoelectron spectroscopy, PHYS SOL ST, 41(1), 1999, pp. 48-50
Impurity-assisted annealing of point defect complexes in ion-implanted silicon
Authors: Pellegrino, P Kuznetsov, AY Svensson, BG
Citation: P. Pellegrino et al., Impurity-assisted annealing of point defect complexes in ion-implanted silicon, PHYSICA B, 274, 1999, pp. 489-492
Comparison of strain relaxation in Si/SiGe/Si heterostructures after annealing in oxidizing and inert atmospheres
Authors: Kuznetsov, AY Radamson, HH Svensson, BG Ni, WX Hansson, GV Larsen, AN
Citation: Ay. Kuznetsov et al., Comparison of strain relaxation in Si/SiGe/Si heterostructures after annealing in oxidizing and inert atmospheres, PHYS SCR, T79, 1999, pp. 202-205
Boron diffusion in Si and SiC during 2.5 MeV proton irradiation at 500-850degrees C
Authors: Kuznetsov, AY Janson, M Hallen, A Svensson, BG Larsen, AN
Citation: Ay. Kuznetsov et al., Boron diffusion in Si and SiC during 2.5 MeV proton irradiation at 500-850degrees C, NUCL INST B, 148(1-4), 1999, pp. 279-283
Sb-enhanced diffusion in strained Si1-xGex: Dependence on biaxial compression
Authors: Kuznetsov, AY Cardenas, J Schmidt, DC Svensson, BG Hansen, JL Larsen, AN
Citation: Ay. Kuznetsov et al., Sb-enhanced diffusion in strained Si1-xGex: Dependence on biaxial compression, PHYS REV B, 59(11), 1999, pp. 7274-7277
Thermodynamic properties of the neutral and ionic components of the holmium trichloride vapor
Authors: Kuznetsov, AY Kudin, LS Pogrebnoi, AM Butman, MF Burdukovskaya, GG
Citation: Ay. Kuznetsov et al., Thermodynamic properties of the neutral and ionic components of the holmium trichloride vapor, ZH FIZ KHIM, 73(3), 1999, pp. 566-569
The enthalpy of formation of gas-phase molecules and ions in binary systems formed by ytterbium, lutetium, and dysprosium trichlorides
Authors: Pogrebnoi, AM Kudin, LS Kuznetsov, AY
Citation: Am. Pogrebnoi et al., The enthalpy of formation of gas-phase molecules and ions in binary systems formed by ytterbium, lutetium, and dysprosium trichlorides, RUSS J PH C, 73(6), 1999, pp. 868-876
Channeling implantations of Al+ into 6H silicon carbide
Authors: Morvan, E Godignon, P Vellvehi, M Hallen, A Linnarsson, M Kuznetsov, AY
Citation: E. Morvan et al., Channeling implantations of Al+ into 6H silicon carbide, APPL PHYS L, 74(26), 1999, pp. 3990-3992
Shallow donors in silicon crystallized from amorphous phase via a silicidemediated epitaxy
Authors: Kuznetsov, AY Aberg, D Svensson, BG
Citation: Ay. Kuznetsov et al., Shallow donors in silicon crystallized from amorphous phase via a silicidemediated epitaxy, PHYS ST S-B, 210(2), 1998, pp. 563-568
Effect of injection of Si self-interstitials on Sb diffusion in Si/Si1-xGex/Si heterostructures
Authors: Kuznetsov, AY Grahn, J Cardenas, J Svensson, BG Hansen, JL Larsen, AN
Citation: Ay. Kuznetsov et al., Effect of injection of Si self-interstitials on Sb diffusion in Si/Si1-xGex/Si heterostructures, PHYS REV B, 58(20), 1998, pp. R13355-R13358
Complexation of anhydrous thorium chloride with organic O-bases in acetone
Authors: Buchikhin, EP Chekmarev, AM Kuznetsov, AY
Citation: Ep. Buchikhin et al., Complexation of anhydrous thorium chloride with organic O-bases in acetone, ZH OBS KH, 68(3), 1998, pp. 357-360
Interaction of zirconium tetrachloride with O-bases in butylacetate
Authors: Buchikhin, EP Chekmarev, AM Kuznetsov, AY
Citation: Ep. Buchikhin et al., Interaction of zirconium tetrachloride with O-bases in butylacetate, ZH OBS KH, 68(3), 1998, pp. 361-364
Nickel distribution in crystalline and amorphous silicon during solid phase epitaxy of amorphous silicon
Authors: Kuznetsov, AY Svensson, BG Nur, O Hultman, L
Citation: Ay. Kuznetsov et al., Nickel distribution in crystalline and amorphous silicon during solid phase epitaxy of amorphous silicon, J APPL PHYS, 84(12), 1998, pp. 6644-6649
Risultati: 1-25 |