Authors: AHMED MM AHMED H LADBROOKE PH

Citation: Mm. Ahmed et al., AN IMPROVED DC MODEL FOR CIRCUIT ANALYSIS PROGRAMS FOR SUBMICRON GAAS-MESFET, I.E.E.E. transactions on electron devices, 44(3), 1997, pp. 360-363

Authors: LADBROOKE PH CARROLL JE

Citation: Ph. Ladbrooke et Je. Carroll, DIELECTRIC-RELAXATION AS A LIMIT ON TRANSISTOR SWITCHING SPEED, Electronics Letters, 32(16), 1996, pp. 1511-1513

Authors: AHMED MM AHMED H LADBROOKE PH

Citation: Mm. Ahmed et al., EFFECTS OF INTERFACE STATES ON SUBMICRON GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ASSESSED BY GATE LEAKAGE CURRENT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1519-1525

Authors: LADBROOKE PH BRIDGE JP

Citation: Ph. Ladbrooke et Jp. Bridge, BENIGN MECHANISM GIVING RISE TO KINKS IN GAAS-MESFET AND HEMT I(V) CHARACTERISTICS, Electronics Letters, 31(22), 1995, pp. 1947-1948

Authors: LADBROOKE PH JASTRZEBSKI AK DONARSKI RJ BRIDGE JP BARNABY JE

Citation: Ph. Ladbrooke et al., MECHANISM OF DRAIN CURRENT DROOP IN GAAS-MESFETS, Electronics Letters, 31(21), 1995, pp. 1875-1876

Authors: CAMERON NI FERGUSON S TAYLOR MRS BEAUMONT SP HOLLAND M TRONCHE C SOULARD M LADBROOKE PH

Citation: Ni. Cameron et al., SELECTIVELY DRY GATE RECESSED GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, HIGH-ELECTRON-MOBILITY TRANSISTORS, AND MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2244-2248