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Results:
1-13
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Results: 13
Authors:
POELMAN D
VERCAEMST R
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: D. Poelman et al., INFLUENCE OF THE GROWTH-CONDITIONS ON THE PROPERTIES OF CAS-EU ELECTROLUMINESCENT THIN-FILMS, Journal of luminescence, 75(2), 1997, pp. 175-181
Authors:
VERCAEMST R
POELMAN D
FIERMANS L
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: R. Vercaemst et al., A DETAILED XPS STUDY OF THE RARE-EARTH COMPOUNDS EUS AND EUF3, Journal of electron spectroscopy and related phenomena, 74(1), 1995, pp. 45-56
Authors:
EVERAERT JL
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: Jl. Everaert et al., A BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) STUDY OF THE BARRIER HEIGHT CHANGE OF AU N-GAAS SCHOTTKY CONTACTS DUE TO MECHANICAL POLISHING/, Semiconductor science and technology, 10(4), 1995, pp. 504-508
Authors:
VERCAEMST AS
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: As. Vercaemst et al., HYDROGEN PASSIVATION CAUSED BY SOFT SPUTTER ETCH CLEANING OF SI, Solid-state electronics, 38(5), 1995, pp. 983-987
Authors:
POELMAN D
VERCAEMST R
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: D. Poelman et al., THE INFLUENCE OF SE-COEVAPORATION ON THE EMISSION-SPECTRA OF CAS-EU AND SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES, Journal of luminescence, 65(1), 1995, pp. 7-10
Authors:
VERCAEMST R
POELMAN D
VANMEIRHAEGHE RL
FIERMANS L
LAFLERE WH
CARDON F
Citation: R. Vercaemst et al., AN XPS STUDY OF THE DOPANTS VALENCE STATES AND THE COMPOSITION OF CAS1-XSEXEU AND SRS1-XSEXCE THIN-FILM ELECTROLUMINESCENT DEVICES, Journal of luminescence, 63(1-2), 1995, pp. 19-30
Authors:
DEPAS M
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: M. Depas et al., ELECTRICAL CHARACTERISTICS OF AL SIO2/N-SI TUNNEL-DIODES WITH AN OXIDE LAYER GROWN BY RAPID THERMAL-OXIDATION/, Solid-state electronics, 37(3), 1994, pp. 433-441
Authors:
VANDENBOSSCHE J
NEYTS KA
DEVISSCHERE P
CORLATAN D
PAUWELS H
VERCAEMST R
FIERMANS L
POELMAN D
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: J. Vandenbossche et al., XPS STUDY OF TBF3 AND TBOF CENTERS IN ZNS, Physica status solidi. a, Applied research, 146(2), 1994, pp. 67-70
Authors:
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: Rl. Vanmeirhaeghe et al., INFLUENCE OF DEFECT PASSIVATION BY HYDROGEN ON THE SCHOTTKY-BARRIER HEIGHT OF GAAS AND INP CONTACTS, Journal of applied physics, 76(1), 1994, pp. 403-406
Authors:
POELMAN D
VERCAEMST R
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: D. Poelman et al., EFFECT OF MOISTURE ON PERFORMANCE OF SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES, JPN J A P 1, 32(8), 1993, pp. 3477-3480
Authors:
DEPAS M
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: M. Depas et al., TUNNEL OXIDES GROWN BY RAPID THERMAL-OXIDATION, Microelectronic engineering, 22(1-4), 1993, pp. 61-64
Authors:
VANDEWALLE R
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: R. Vandewalle et al., ON THE RELATIONSHIP BETWEEN INTERFACIAL DEFECTS AND SCHOTTKY-BARRIER HEIGHT IN AG, AU, AND AL N-GAAS CONTACTS/, Journal of applied physics, 74(3), 1993, pp. 1885-1889
Authors:
DELAERE AL
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: Al. Delaere et al., AN INVESTIGATION ON THE INFLUENCE OF SI SURFACE PRETREATMENT ON THE FREQUENCY-DEPENDENCE OF THE IMPEDANCE OF CO N-SI SCHOTTKY BARRIERS/, Semiconductor science and technology, 6(7), 1991, pp. 653-658
Risultati:
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