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Results:
1-8
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Results: 8
Authors:
ANDROULIDAKI M
MICHELAKIS C
LAGADAS M
FOUKARAKI V
PANAYOTATOS P
Citation: M. Androulidaki et al., UNIFORMITY STUDY IN PM-HEMT STRUCTURES AND DEVICES BY OPTICAL AND ELECTRICAL CHARACTERIZATION, Microelectronic engineering, 43-4, 1998, pp. 567-573
Authors:
LAGADAS M
CALAMIOTOU M
ANDROULIDAKI M
HATZOPOULOS Z
CHRISTOU A
Citation: M. Lagadas et al., LATTICE MISMATCH AND CONDUCTIVITY IN LTALGAAS LAYERS, Microelectronic engineering, 43-4, 1998, pp. 575-580
Authors:
LAGADAS M
ANDROULIDAKI M
HATZOPOULOS Z
CALAMIOTOU M
Citation: M. Lagadas et al., DEPENDENCE OF ARSENIC ANTISITE DEFECT CONCENTRATION AND 2-DIMENSIONALGROWTH MODE ON LT GAAS GROWTH-CONDITIONS, Microelectronic engineering, 43-4, 1998, pp. 581-586
Authors:
FENG T
DIMOULAS A
CHRISTOU A
LAGADAS M
HATZOPOULO Z
Citation: T. Feng et al., ENHANCEMENT OF 2D GROWTH OF MBE HETEROSTRUCTURES USING LASER-ASSISTEDMBE TECHNIQUES, Thin solid films, 318(1-2), 1998, pp. 22-28
Authors:
LAGADAS M
HATZOPOULOS Z
KORNILIOS N
ANDROULIDAKI M
CHRISTOU A
PANAYOTATOS P
Citation: M. Lagadas et al., ELECTRICAL-PROPERTIES OF N-GAAS EPILAYERS, FET AND HEMT STRUCTURES GROWN ON LT-GAAS BY MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 355-358
Authors:
LAGADAS M
HATZOPOULOS Z
TSAGARAKI K
CALAMIOTOU M
LIOUTAS C
CHRISTOU A
Citation: M. Lagadas et al., THE EFFECT OF ARSENIC OVERPRESSURE ON THE STRUCTURAL-PROPERTIES GAAS GROWN AT LOW-TEMPERATURE, Journal of applied physics, 80(8), 1996, pp. 4377-4383
Authors:
CALAMIOTOU M
RAPTIS YS
ANASTASSAKIS E
LAGADAS M
HATZOPOULOS Z
Citation: M. Calamiotou et al., XRD AND RAMAN STUDIES OF LOW-TEMPERATURE-GROWN GAAS EPILAYERS, Solid state communications, 87(6), 1993, pp. 563-566
Authors:
LAGADAS M
TSAGARAKI K
HATZOPOULOS Z
CHRISTOU A
Citation: M. Lagadas et al., INVESTIGATION OF LOW-TEMPERATURE (LT) LAYERS OF GAAS GROWN BY MBE - COMPARISON OF MESFET AND HEMT PERFORMANCE, Journal of crystal growth, 127(1-4), 1993, pp. 76-80
Risultati:
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