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Results: 1-25 | 26-46
Results: 1-25/46
FOURIER-TRANSFORM INFRARED-SPECTROSCOPY OF CORONA-PROCESSED SILICON DIOXIDE FILMS
Authors: LANDHEER D SAYEDI SM LANDSBERGER LM KAHRIZI M
Citation: D. Landheer et al., FOURIER-TRANSFORM INFRARED-SPECTROSCOPY OF CORONA-PROCESSED SILICON DIOXIDE FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 605-608
FACTORS AFFECTING INTERFACE-STATE DENSITY AND STRESS OF SILICON-NITRIDE FILMS DEPOSITED ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION
Authors: LANDHEER D RAJESH K MASSON D HULSE JE SPROULE GI QUANCE T
Citation: D. Landheer et al., FACTORS AFFECTING INTERFACE-STATE DENSITY AND STRESS OF SILICON-NITRIDE FILMS DEPOSITED ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 2931-2940
EXCIMER-LASER CLEANING OF SILICON-WAFER BACKSIDE METALLIC PARTICLES
Authors: BEAUDOIN F MEUNIER M SIMARDNORMANDIN M LANDHEER D
Citation: F. Beaudoin et al., EXCIMER-LASER CLEANING OF SILICON-WAFER BACKSIDE METALLIC PARTICLES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1976-1979
BACK-SURFACE PASSIVATION OF POLYCRYSTALLINE CDSE THIN-FILM TRANSISTORS
Authors: LANDHEER D MASSON DP BELKOUCH S DAS SR QUANCE T LEBRUN L HULSE JE
Citation: D. Landheer et al., BACK-SURFACE PASSIVATION OF POLYCRYSTALLINE CDSE THIN-FILM TRANSISTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 834-837
EFFECTS OF INITIAL ANNEALING TREATMENTS ON THE ELECTRICAL CHARACTERISTICS AND STABILITY OF UNPASSIVATED CDSE THIN-FILM TRANSISTORS
Authors: BELKOUCH S LANDHEER D MASSON DP DAS SR QUANCE T LEBRUN L ROLFE SJ
Citation: S. Belkouch et al., EFFECTS OF INITIAL ANNEALING TREATMENTS ON THE ELECTRICAL CHARACTERISTICS AND STABILITY OF UNPASSIVATED CDSE THIN-FILM TRANSISTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 860-863
HETEROSTRUCTURE SI1-XGEX CHANNEL PMOSFETS WITH GE CONCENTRATION
Authors: PAWLOWICZ C TARR NG BERNDT LP WILLIAMS RL LANDHEER D XU DX ABID R MCALISTER SP
Citation: C. Pawlowicz et al., HETEROSTRUCTURE SI1-XGEX CHANNEL PMOSFETS WITH GE CONCENTRATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 864-867
ELECTRICAL CHARACTERIZATION OF THIN SIO2-FILMS ON SILICON CREATED BY ANODIC OXYGEN CORONA DISCHARGE PROCESSING
Authors: SAYEDI SM LANDSBERGER LM KAHRIZI M BELKOUCH S LANDHEER D
Citation: Sm. Sayedi et al., ELECTRICAL CHARACTERIZATION OF THIN SIO2-FILMS ON SILICON CREATED BY ANODIC OXYGEN CORONA DISCHARGE PROCESSING, Journal of the Electrochemical Society, 145(8), 1998, pp. 2937-2943
MECHANISMS OF FILM GROWTH-RATE ENHANCEMENT IN ANODIC AND CATHODIC CORONA-DISCHARGE OXIATION PROCESSES
Authors: SAYEDI SM LANDHEER D LANDSBERGER LM KAHRIZI M
Citation: Sm. Sayedi et al., MECHANISMS OF FILM GROWTH-RATE ENHANCEMENT IN ANODIC AND CATHODIC CORONA-DISCHARGE OXIATION PROCESSES, Journal of the Electrochemical Society, 145(8), 1998, pp. 2944-2950
INTRINSIC ELECTRIC-FIELDS IN SILICON
Authors: SIMPSON PJ KNIGHTS AP GOLDBERG RD AERS GC LANDHEER D
Citation: Pj. Simpson et al., INTRINSIC ELECTRIC-FIELDS IN SILICON, Applied surface science, 116, 1997, pp. 211-214
PHYSICAL AND ELECTRICAL ANALYSIS OF SILICON DIOXIDE THIN-FILMS PRODUCED BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION
Authors: LANDHEER D RAGNARSSON LA BELKOUCH S
Citation: D. Landheer et al., PHYSICAL AND ELECTRICAL ANALYSIS OF SILICON DIOXIDE THIN-FILMS PRODUCED BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION, Microelectronic engineering, 36(1-4), 1997, pp. 53-60
FORMATION OF HIGH-QUALITY SILICON DIOXIDE FILMS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA OXIDATION AND PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: LANDHEER D HULSE JE QUANCE T
Citation: D. Landheer et al., FORMATION OF HIGH-QUALITY SILICON DIOXIDE FILMS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA OXIDATION AND PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 293(1-2), 1997, pp. 52-62
OXIDATION AND SULFUR PASSIVATION OF GAINASP(100)
Authors: RAJESH K HUANG LJ LAU WM BRUCE R INGREY S LANDHEER D
Citation: K. Rajesh et al., OXIDATION AND SULFUR PASSIVATION OF GAINASP(100), Journal of applied physics, 81(7), 1997, pp. 3304-3310
HOLE CONFINEMENT AND MOBILITY IN HETEROSTRUCTURE SI GE/SI P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/
Authors: CYCA BR ROBINS KG TARR NG XU DX NOEL JP LANDHEER D SIMARDNORMANDIN M
Citation: Br. Cyca et al., HOLE CONFINEMENT AND MOBILITY IN HETEROSTRUCTURE SI GE/SI P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/, Journal of applied physics, 81(12), 1997, pp. 8079-8083
SI GE HETEROSTRUCTURE ON SULFUR PASSIVATED GAAS(110)/
Authors: HUANG LJ RAJESH K LAU WM WU XZ LANDHEER D BARIBEAU JM INGREY S
Citation: Lj. Huang et al., SI GE HETEROSTRUCTURE ON SULFUR PASSIVATED GAAS(110)/, Applied physics letters, 71(2), 1997, pp. 237-239
STRUCTURE OF THE SINX GAAS (110) INTERFACE MODIFIED WITH ULTRATHIN SIAND SULFUR PASSIVATION/
Authors: HUANG LJ LAU WM TANG HT LENNARD WN MITCHELL IV LANDHEER D BARIBEAU JM INGREY S
Citation: Lj. Huang et al., STRUCTURE OF THE SINX GAAS (110) INTERFACE MODIFIED WITH ULTRATHIN SIAND SULFUR PASSIVATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2895-2900
SULFUR DIFFUSION AT THE SI GAAS(110) INTERFACE/
Authors: XIA H LENNARD WN HUANG LJ LAU WM BARIBEAU JM LANDHEER D
Citation: H. Xia et al., SULFUR DIFFUSION AT THE SI GAAS(110) INTERFACE/, Journal of applied physics, 80(8), 1996, pp. 4354-4357
POSITRON BEAM STUDY OF ANNEALED SILICON-NITRIDE FILMS
Authors: LANDHEER D AERS GC SPROULE GI LAWTHER DW SIMPSON PJ MASSOUMI GR TONG SY
Citation: D. Landheer et al., POSITRON BEAM STUDY OF ANNEALED SILICON-NITRIDE FILMS, Journal of applied physics, 79(5), 1996, pp. 2458-2462
FORMATION OF HIGH-QUALITY NITRIDED SILICON DIOXIDE FILMS USING ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION WITH NITROUS-OXIDE AND SILANE
Authors: LANDHEER D TAO Y HULSE JE QUANCE T XU DX
Citation: D. Landheer et al., FORMATION OF HIGH-QUALITY NITRIDED SILICON DIOXIDE FILMS USING ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION WITH NITROUS-OXIDE AND SILANE, Journal of the Electrochemical Society, 143(5), 1996, pp. 1681-1684
MODIFICATION OF THE GAINASP(100) SURFACE BY OXIDATION AND SULFUR PASSIVATION
Authors: RAJESH K HUANG LJ LAU WM BRUCE R INGREY S LANDHEER D
Citation: K. Rajesh et al., MODIFICATION OF THE GAINASP(100) SURFACE BY OXIDATION AND SULFUR PASSIVATION, Canadian journal of physics, 74, 1996, pp. 89-94
PASSIVATION OF THE SINX GAAS(110) INTERFACE
Authors: HUANG LJ RAJESH K LAU WM LANDHEER D BARIBEAU JM WU XZ INGREY S
Citation: Lj. Huang et al., PASSIVATION OF THE SINX GAAS(110) INTERFACE, Canadian journal of physics, 74, 1996, pp. 100-103
COUPLED-WAVE ANALYSIS OF LAMELLAR METAL TRANSMISSION GRATINGS FOR THEVISIBLE AND THE INFRARED
Authors: KUTA JJ VANDRIEL HM LANDHEER D FENG Y
Citation: Jj. Kuta et al., COUPLED-WAVE ANALYSIS OF LAMELLAR METAL TRANSMISSION GRATINGS FOR THEVISIBLE AND THE INFRARED, Journal of the Optical Society of America. A, Optics, image science,and vision., 12(5), 1995, pp. 1118-1127
SULFIDE-ASSISTED REORDERING AT THE INP SURFACE AND SINX INP INTERFACE/
Authors: KWOK RWM JIN G SO BKL HUI KC HUANG L LAU WM HSU CC LANDHEER D
Citation: Rwm. Kwok et al., SULFIDE-ASSISTED REORDERING AT THE INP SURFACE AND SINX INP INTERFACE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 652-657
INTERFACIAL PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR CAPACITORS ONGAAS(110)
Authors: HUANG LJ RAJESH K LAU WM INGREY S LANDHEER D NOEL JP LU ZH
Citation: Lj. Huang et al., INTERFACIAL PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR CAPACITORS ONGAAS(110), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 792-796
ABSOLUTE COVERAGE MEASUREMENTS ON SULFUR-PASSIVATED GAAS(100)
Authors: XIA H LENNARD WN MASSOUMI GR VANECK JJJ HUANG LJ LAU WM LANDHEER D
Citation: H. Xia et al., ABSOLUTE COVERAGE MEASUREMENTS ON SULFUR-PASSIVATED GAAS(100), Surface science, 324(2-3), 1995, pp. 159-168
POSITRON STUDY OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SILICON-NITRIDE FILMS
Authors: LANDHEER D AERS GC SPROULE GI KHATRI R SIMPSON PJ GUJRATHI SC
Citation: D. Landheer et al., POSITRON STUDY OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SILICON-NITRIDE FILMS, Journal of applied physics, 78(4), 1995, pp. 2568-2574
Risultati: 1-25 | 26-46